P. Montanini

FINFET technology featuring high mobility SiGe channel for 10nm and beyond

D. Liu, P. Oldiges, N. Loubet, 2016, 2016 IEEE Symposium on VLSI Technology.

High performance bulk planar 20nm CMOS technology for low power mobile applications

O. Menut, Y. Liu, S. Samavedam, 2012, 2012 Symposium on VLSI Technology (VLSIT).

A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

B. Lherron, D. Chanemougame, P. Oldiges, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

P. Oldiges, C. Park, N. Loubet, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications

C. Park, N. Loubet, B. Haran, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

10nm FINFET technology for low power and high performance applications

D. Chanemougame, P. Oldiges, B. Haran, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).