Roland Madar

发表

Principles and Limitations of Numerical Simulation of SiC Boule Growth by Sublimation

Michel Pons, Roland Madar, T. Billon, 2004 .

Control of the Supersaturation in the CF-PVT Process for the Growth of Silicon Carbide Crystals: Research and Applications

M. Ucar, Didier Chaussende, Francis Baillet, 2005 .

Electrical and optical properties of silicide single crystals and thin films

A. Borghesi, King-Ning Tu, Roland Madar, 1993 .

Deposition of (Ti,Al)N thin films by organometallic chemical vapor deposition: thermodynarnic predictions and experimental results

Claude Bernard, S. Gilles, Roland Madar, 1997 .

Materials science: Silicon carbide in contention

Roland Madar, R. Madar, 2004, Nature.

Intrinsic properties of NiSi

B. Meyer, Roland Madar, O. Laborde, 1997 .

QuaSiC Smart-Cut® Substrates for SiC High Power Devices

B. Ghyselen, E. Jalaguier, Edwige Bano, 2002 .