Misaichi Takeuchi

Photoexcitation-induced current sensing on semi-insulating GaAs using a tunneling microscope tip

Kenji Kawashima, Hideo Adachi, Shinji Takai, 1999, International Symposium on Photonics and Applications.

High-Sensitivity Ozone Sensing Using 280 nm Deep Ultraviolet Light-Emitting Diode for Detection of Natural Hazard Ozone

Yumi Ahiko, Hirotaka Nakamura, Masahito Kurouchi, 2012 .

Al- and N-polar AlN layers grown on c-plane sapphire substrates by modified flow-modulation MOCVD

Toru Kinoshita, Koji Kawasaki, Yoshinao Kumagai, 2007 .

Polarity dependence of AlN {0001} decomposition in flowing H2

Toru Kinoshita, Yoshinao Kumagai, Hisashi Murakami, 2007 .

III–Nitride Epitaxy on Atomically Controlled Surface of Sapphire Substrate with Slight Misorientation

Hideo Aida, Kazuhiko Sunakawa, Koji Koyama, 2012 .

Current and potential characterization on InAs nanowires by contact-mode atomic force microscopy and Kelvin probe force microscopy.

Misaichi Takeuchi, Takuji Takahashi, Takuji Takahashi, 2002, Ultramicroscopy.

Light-illuminated STM studies on photo-absorption in InAs nanowires.

Kan Takada, Misaichi Takeuchi, K. Takada, 2003, Ultramicroscopy.