Robert J. Socha

发表

Through-pitch low-k1 contact hole imaging with CPL technology

Vincent Wiaux, Geert Vandenberghe, Kurt G. Ronse, 2004, Photomask Japan.

Contact hole reticle optimization by using interference mapping lithography (IML)

Will Conley, J. Fung Chen, Stephen D. Hsu, 2004, SPIE Advanced Lithography.

CPL mask technology for sub-100-nm contact hole imaging

Kevin D. Lucas, Christopher J. Progler, J. Fung Chen, 2004, Photomask Japan.

Application of Chromeless Phase Lithography (CPL) masks in ArF lithography

Will Conley, Christopher J. Progler, Robert J. Socha, 2002, Photomask Technology.

Complex 2D pattern lithography at λ/4 resolution using chromeless phase lithography (CPL)

John S. Petersen, Stephen Hsu, Robert J. Socha, 2002, SPIE Advanced Lithography.

Development of a sub-100nm integrated imaging system using chromeless phase-shifting imaging with very high NA KrF exposure and off-axis illumination

Will Conley, John S. Petersen, David J. Gerold, 2002, SPIE Advanced Lithography.

Designing dual-trench alternating phase-shift masks for 140-nm and smaller features using 248-nm KrF and 193-nm ArF lithography

Martin McCallum, John S. Petersen, J. Fung Chen, 1998, Photomask and Next Generation Lithography Mask Technology.

Halftone biasing OPC technology: an approach for achieving fine bias control on raster-scan systems

Kent H. Nakagawa, J. Fung Chen, Robert J. Socha, 1999, Photomask and Next Generation Lithography Mask Technology.

Resolution enhancement with high-transmission attenuating phase-shift masks

Will Conley, John S. Petersen, Robert J. Socha, 1999, Photomask and Next Generation Lithography Mask Technology.

Extending aggressive low-k1 design rule requirements for 90-nm and 65-nm nodes via simultaneous optimization of NA, illumination, and OPC

Ting Chen, Stephen D. Hsu, Robert J. Socha, 2004, SPIE Advanced Lithography.

Extending KrF to 100-nm imaging with high-NA- and chromeless phase lithography technology

Will Conley, John S. Petersen, Donis G. Flagello, 2002, SPIE Advanced Lithography.

KrF lithography for 130 nm

Geert Vandenberghe, Kurt G. Ronse, Jo Finders, 2000, Advanced Lithography.

RET masks for the final frontier of optical lithography

Jungchul Park, Sangbong Park, Ting Chen, 2005, Photomask Japan.

Implementation of pattern-specific illumination pupil optimization on Step & Scan systems

Eric Hendrickx, Andre Engelen, Robert J. Socha, 2004, SPIE Advanced Lithography.

Optimizing and enhancing optical systems to meet the low k1 challenge

Jo Finders, Oscar Noordman, Jan Baselmans, 2003, SPIE Advanced Lithography.

CD error sensitivity to "sub-killer" defects at k1 near 0.4: II

Kent H. Nakagawa, J. Fung Chen, Robert J. Socha, 1999, Photomask Technology.

Defect printability in CPL mask technology

Will Conley, Christopher J. Progler, Robert J. Socha, 2004, SPIE Advanced Lithography.

Impact of attenuated PSM repair for 130-nm polygate lithography process

Will Conley, David Wang, Henry Lin, 2001, SPIE Advanced Lithography.

Contact hole reticle optimization by using interference mapping lithography (IML)

Stephen D. Hsu, Robert J. Socha, Douglas J. Van Den Broeke, 2004, Photomask Japan.

Forbidden pitches for 130-nm lithography and below

Jo Finders, Donis G. Flagello, J. Fung Chen, 2000, Advanced Lithography.

Assessment of a hypothetical road map that extends optical lithography through the 70-nm technology node

Ronald L. Gordon, Bruce W. Smith, Martin McCallum, 1999, Other Conferences.

65-nm full-chip implementation using double dipole lithography

Will Conley, Tsann-Bim Chiou, Jo Finders, 2003, SPIE Advanced Lithography.

Dual damascene photo process using negative-tone resist

Will Conley, Stephen Hsu, Robert J. Socha, 2000, Advanced Lithography.

Development of a sub-100-nm integrated imaging system using chromeless phase-shifting imaging with very high NA KrF exposure and off-axis illumination

Will Conley, John S. Petersen, David J. Gerold, 2002, SPIE Advanced Lithography.

CPL reticle technology for advanced device applications

Kevin D. Lucas, Philippe Thony, Christopher J. Progler, 2004, Photomask Japan.

Assessment of a hypothetical roadmap that extends optical lithography through the 70-nm technology node

Ronald L. Gordon, Bruce W. Smith, Martin McCallum, 1998, Photomask Technology.

Application of CPL with Interference Mapping Lithography to generate random contact reticle designs for the 65-nm node

J. Fung Chen, Stephen D. Hsu, Robert J. Socha, 2004, Photomask Japan.

0.11-μm imaging in KrF lithography using dipole illumination

Jo Finders, Eelco van Setten, Robert J. Socha, 2001, Microelectronic and MEMS Technologies.

CD error sensitivity to "sub-killer" defects at k1 near 0.4

Kent H. Nakagawa, J. Fung Chen, Robert J. Socha, 1999, Advanced Lithography.

Can DUV take us below 100 nm?

Jo Finders, Jan B. van Schoot, Donis G. Flagello, 2001, SPIE Advanced Lithography.

Mesa or Trench Type for Chromeless Phase-shift Lithography From Photolithographic Performance Point of View

Stephen Hsu, J. Fung Chen, Robert J. Socha, 2002, Photomask Technology.

The application of CPL reticle technology for the 0.045-mm node

Will Conley, Kevin D. Lucas, Fung Chen, 2004, SPIE Advanced Lithography.

Trench warfare!: fitting photons for fine-feature fabrication

Will Conley, Stephen Hsu, Robert J. Socha, 2001, SPIE Advanced Lithography.

Advanced 193 tri-tone EAPSM (9%-18%) for 65 nm node

Will Conley, Greg P. Hughes, Laurent Dieu, 2002, Photomask Technology.