S. Fafard

发表

Advances with vertical epitaxial heterostructure architecture (VEHSA) phototransducers for optical to electrical power conversion efficiencies exceeding 50 percent

R. Arès, V. Aimez, K. Hinzer, 2016, SPIE OPTO.

Tunable InAs quantum-dot lasers grown on (100) InP

P. J. Poole, P. Marshall, S. Fafard, 2003, Microelectron. J..

Development of dual junction GaInP/GaAs solar cells for high-performance concentrator photovoltaic quad-junction III-V/IV

V. Aimez, K. Hinzer, S. Fafard, 2021, OPTO.

Passive integrated optics elements based on long-range surface plasmon polaritons

P. Berini, S. Fafard, P. Berini, 2006, Journal of Lightwave Technology.

Effect of parameter variations on the current-voltage behavior of AlGaAs tunnel junction models

V. Aimez, K. Hinzer, S. Fafard, 2008, 2008 1st Microsystems and Nanoelectronics Research Conference.

AlGaAs tunnel junction for high efficiency multi-junction solar cells: Simulation and measurement of temperature-dependent operation

V. Aimez, K. Hinzer, S. Fafard, 2009, 2009 34th IEEE Photovoltaic Specialists Conference (PVSC).

Fast growth synthesis of mesoporous germanium films by high frequency bipolar electrochemical etching

Dominique Drouin, V. Aimez, Ali Belarouci, 2017 .

Hidden symmetries in the energy levels of excitonic ‘artificial atoms’

P. Hawrylak, M. Bayer, A. Forchel, 2000, Nature.

External cavity quantum dot tunable laser through 1.55 μm

Sylvain Raymond, Pedro Barrios, G. Pakulski, 2005 .

Spatially Resolved Visible Luminescence of Self-Assembled Semiconductor Quantum Dots

S. Fafard, P. Petroff, S. Fafard, 1995, Science.