D. J. Dumin

发表

OXIDE WEAROUT, BREAKDOWN, AND RELIABILITY

D. J. Dumin, D. Dumin, 2001 .

Low‐level leakage currents in thin silicon oxide films

R. S. Scott, J. R. Cooper, D. J. Dumin, 1994 .

Characterizing wearout, breakdown and trap generation in thin silicon oxide

D. J. Dumin, D. Dumin, 1997 .

Properties of high voltage stress generated traps in thin silicon oxides

T. W. Hughes, R. S. Scott, B. T. Moore, 1995, Proceedings of 1995 IEEE International Reliability Physics Symposium.

Test structures to investigate thin insulator dielectric wearout and breakdown

D. J. Dumin, D. Dumin, N. B. Heilemann, 1990, Proceedings of the 1991 International Conference on Microelectronic Test Structures.

The superposition of transient low-level leakage currents in stressed silicon oxides

R. S. Scott, D. J. Dumin, D. Dumin, 1995 .

A model relating wearout to breakdown in thin oxides

R. S. Scott, D. J. Dumin, D. Dumin, 1994 .

Stress Induced Increased Low Level Leakage in Thin Oxides

D. J. Dumin, J. R. Maddux, D.-P. Wong, 1992 .

High field emission related thin oxide wearout and breakdown

R. S. Scott, D. J. Dumin, D. Dumin, 1994, Proceedings of 1994 IEEE International Reliability Physics Symposium.

The non-uniqueness of breakdown distributions in silicon oxides

George A. Brown, Omer Oralkan, J. C. Jackson, 1997, 1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319).

Bipolar stressing, breakdown, and trap generation in thin silicon oxides

D. J. Dumin, S. Vanchinathan, 1994 .

Correlation of the decay of tunneling currents with trap generation inside thin oxides

B. T. Moore, D. J. Dumin, D. Dumin, 1996 .

Correlation of wearout and breakdown in sub-10 nm silicon oxide

George A. Brown, W. Vigrass, D. J. Dumin, 1988, Technical Digest., International Electron Devices Meeting.

Limitations on oxide thicknesses in flash EEPROM applications

R. S. Scott, D. J. Dumin, D. Dumin, 1996, Proceedings of International Reliability Physics Symposium.

Properties of high-voltage stress generated traps in thin silicon oxide

T. W. Hughes, R. S. Scott, B. T. Moore, 1996 .

The polarity, field and fluence dependence of interface trap generation in thin silicon oxide

George A. Brown, J. R. Cooper, D. J. Dumin, 1992 .

Extrapolation of high-voltage stress measurements to low-voltage operation for thin silicon-oxide films

George A. Brown, D. J. Dumin, D. Dumin, 1991 .

Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides

D. J. Dumin, D. Dumin, J. Maddux, 1993 .

A model relating wearout induced physical changes in thin oxides to the statistical description of breakdown

R. S. Scott, D. J. Dumin, D. Dumin, 1993, 31st Annual Proceedings Reliability Physics 1993.

Nonuniqueness of time-dependent-dielectric-breakdown distributions

George A. Brown, Omer Oralkan, J. C. Jackson, 1997 .

Determination of the relative densities of high‐voltage stressed‐generated traps near the anode and cathode in 10‐nm‐thick silicon oxides

T. W. Hughes, D. J. Dumin, 1996 .

The electric field, oxide thickness, time and fluence dependences of trap generation in silicon oxides and their support of the E-model of oxide breakdown

D. J. Dumin, D. Qian, 1999, Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394).

The charging and discharging of high-voltage stress-generated traps in thin silicon oxide

R. S. Scott, D. J. Dumin, D. Dumin, 1996 .

Polarity dependence of thin oxide wearout

George A. Brown, D. J. Dumin, K. J. Dickerson, 1989 .

Traps in Reoxidized Nitrided Oxides of Varying Thicknesses

D. J. Dumin, R. Natarajan, 1995 .

Wearout and Breakdown in Thin Silicon Oxide

D. J. Dumin, D. Dumin, 1995 .

R. S. Scott, D. J. Dumin, D. Dumin, 1995 .

The Transient Nature of Excess Low‐Level Leakage Currents in Thin Oxides

R. S. Scott, D. J. Dumin, D. Dumin, 1995 .