Subhananda Chakrabarti

发表

Impact of ultra-thin quaternary capping on modulation doped p-i-p quantum dots (InAs/GaAs) based infrared detector

Debabrata Das, Vidya P. Deviprasad, Hemant Ghadi, 2019, OPTO.

Improvement in grain size and crystallinity of sputtered ZnO thin film with optimized annealing ambient

Hemant Ghadi, Subhananda Chakrabarti, Punam Murkute, 2017, OPTO.

Surface engineering using compounds of titanium nanocoatings for silicon-based optical devices

Subhananda Chakrabarti, Ankitha E. Bangera, Kumar Appaiah, 2019, OPTO.

Influence of Li implantation on the optical and electrical properties of ZnO film

Subhananda Chakrabarti, S. Nagar, Bhavesh Sinha, 2011, OPTO.

Enhancement (100 times) of photoluminescence in pulsed laser deposited ZnO thin films by hydrogen ion implantation

Subhananda Chakrabarti, S. Nagar, 2013, Photonics West - Optoelectronic Materials and Devices.

Demonstration of high responsivity(~2.16 A/W) and detectivity(~1011 Jones) in the long wavelength (~10.2μm) from InGaAs/GaAs quantum dot infrared photodetector with quaternary InAlGaAs capping

Subhananda Chakrabarti, Sourav Adhikary, A. G. U. Perera, 2012, Defense + Commercial Sensing.

Photonic crystal microcavity source-based chemical sensor

Swapnajit Chakravarty, Subhananda Chakrabarti, Y. Kang, 2005, SPIE Optics East.

Impact of ternary capping on p-i-p InAs/GaAs quantum-dot infrared photodetectors

Debabrata Das, Vidya P. Deviprasad, Hemant Ghadi, 2019, OPTO.

Molecular beam epitaxial growth of GaAs/AlGaAs multiquantum well on germanium substrate

Subhananda Chakrabarti, N. Halder, S. Banerjee, 2011, OPTO.

Effects of low energy H- ion implantation on the optical properties of ZnMgO thin films

Subhananda Chakrabarti, Shantanu Saha, S. Nagar, 2015, Photonics West - Optoelectronic Materials and Devices.

Spin-polarized semiconductor light sources

Pallab Bhattacharya, Subhananda Chakrabarti, M. Holub, 2005, SPIE OPTO.

A low temperature investigation of the optical properties of coupled InAs quantum dots with GaAsN/GaAs spacers

Subhananda Chakrabarti, Roshan Makkar, Akshay Balgarkashi, 2017, OPTO.

Impact of rapid thermal annealing on dilute nitride (GaAsN)-capped InAs/GaAs quantum dots exhibiting optical emission beyond ~1.5 μm

Subhananda Chakrabarti, Roshan Makkar, Akshay Balgarkashi, 2016, NanoScience + Engineering.

Influence of low energy H- ion implantation on the electrical and material properties of quaternary alloy (In0.21Al0.21Ga0.58As) capped InAs/GaAs n-i-n QDIPs

Hemant Ghadi, Subhananda Chakrabarti, A. Basu, 2013, Photonics West - Optoelectronic Materials and Devices.

Enhancement in optical and structural properties of Zn0.85Mg0.15O nanorods over thin films synthesized by hydrothermal chemical treatment

Hemant Ghadi, Subhananda Chakrabarti, Punam Murkute, 2016, SPIE OPTO.

The impact of time-varying phosphorus doping on ZnMgO thin films and achievement of dominant acceptor-bound-exciton peak

Subhananda Chakrabarti, Shantanu Saha, S. Nagar, 2015, Photonics West - Optoelectronic Materials and Devices.

Design of current mirror integration ROIC for snapshot mode operation

Hari Shanker Gupta, Subhananda Chakrabarti, M. Shojaei Baghini, 2016 .

Ground state energy trend in single and multilayered coupled InAs/GaAs QDs capped with InGaAs layers: effect of thickness of InGaAs layer and the RTA treatment

Subhananda Chakrabarti, S. Jejurikar, A. Mishra, 2012, Other Conferences.

Influence of oxygen partial pressure on optical and structural properties of RF sputtered ZnO thin films

A. Chatterjee, Subhananda Chakrabarti, Punam Murkute, 2016, SPIE OPTO.

Impact of varying barrier thickness on the optical characteristics of multilayer InAs/GaAs QDIPs

Debiprasad Panda, Subhananda Chakrabarti, Harshal Rawool, 2017, OPTO.

P-type ZnO films by phosphorus doping using plasma immersion ion-implantation technique

Subhananda Chakrabarti, S. Nagar, 2013, Photonics West - Optoelectronic Materials and Devices.

A low-temperature photoluminescence study of GaAs1-xNx/GaAs multiple quantum wells

Subhananda Chakrabarti, Shivam Singh, Roshan Makkar, 2017, OPTO.

Cross-sectional TEM (XTEM) analysis for vertically coupled quaternary In0.21Al0.21Ga0.58As capped InAs/GaAs quantum dot infrared photodetectors

Hemant Ghadi, Subhananda Chakrabarti, Sourav Adhikary, 2015, Photonics West - Optoelectronic Materials and Devices.

Co-relation of theoretical simulation with experimental results for InAs quantum-dot heterostructures with different capping material

Hemant Ghadi, Subhananda Chakrabarti, P. K. Singh, 2018, OPTO.

Influence of modulation doping on p-i-p quantum-dots (InAs/GaAs)-based infrared detector performance

Debabrata Das, Vidya P. Deviprasad, Hemant Ghadi, 2019, OPTO.

Multi-spectral InAs/GaAs-based quantum dot infrared photodetector with quaternary (InAlGaAs) capping operates at low bias voltage

Subhananda Chakrabarti, Sourav Adhikary, A. G. U. Perera, 2013, Photonics West - Optoelectronic Materials and Devices.

Effect of lithium-ion implantation of varying fluence on the optical properties of ZnMgO

Subhananda Chakrabarti, Shantanu Saha, S. Nagar, 2014, Photonics West - Optoelectronic Materials and Devices.

Enhancement in device performance of hepta-layer coupled InGaAs quantum dot infrared detector by AuGe surface plasmons

Hemant Ghadi, Subhananda Chakrabarti, Lavi Tyagi, 2016, NanoScience + Engineering.

A detail investigation on quaternary and ternary capped strain coupled quantum dots based infrared photodetectors and effect of rapid thermal annealing temperature

Hemant Ghadi, Subhananda Chakrabarti, Sourav Adhikary, 2015, Commercial + Scientific Sensing and Imaging.

Low-temperature photoluminescence studies in epitaxially-grown GaAsN/InAs/GaAsN quantum-dot-in-well structures emitting at 1.31 μm

Subhananda Chakrabarti, Shivam Singh, Roshan Makkar, 2017, OPTO.

P-type nitrogen- and phosphorus-doped ZnO thin films grown by pulsed laser deposition on sapphire substrates

Subhananda Chakrabarti, A. Meaney, Enda McGlynn, 2007, SPIE OPTO.

Effect of high energy proton implantation on the device characteristics of InAlGaAs-capped InGaAs/GaAs quantum dot based infrared photodetectors

D. Pal, Hemant Ghadi, Subhananda Chakrabarti, 2015, Commercial + Scientific Sensing and Imaging.

Enhancement of photoluminescence in RF sputtered ZnMgO thin films by optimizing annealing temperature

Hemant Ghadi, Subhananda Chakrabarti, Punam Murkute, 2017, OPTO.

Temperature-dependent phosphorous dopant activation in ZnO thin film deposited using plasma immersion ion implantation

Hemant Ghadi, Subhananda Chakrabarti, Punam Murkute, 2018, OPTO.

Improvement in operating temperature of InAs/GaAs quantum-dots-based photodetectors by varying position of localized carriers in active region

Debabrata Das, Vidya P. Deviprasad, Hemant Ghadi, 2019, OPTO.

Stability in peak emission wavelength in strain-coupled multilayer InAs/GaAs quantum dot heterostructures when subjected to high-temperature rapid thermal annealing

Hemant Ghadi, Subhananda Chakrabarti, Sourav Adhikary, 2015, Photonics West - Optoelectronic Materials and Devices.

Effect of time varying phosphorus implantation on optoelectronics properties of RF sputtered ZnO thin-films

Hemant Ghadi, Subhananda Chakrabarti, Punam Murkute, 2018, OPTO.

Enhancement in optical properties of ZnO nanorods by UV ozone treatment

Hemant Ghadi, Subhananda Chakrabarti, Punam Murkute, 2019, OPTO.

Photoluminescence and hall study for the production and recovery of defects in phosphorus implanted ZnO films

Subhananda Chakrabarti, S. Nagar, A. Mandal, 2011, OPTO.