Julien Buckley

Silicon nanowires for multisensing applications

Thierry Baron, Françoise Vinet, Guillaume Delapierre, 2010, Defense + Commercial Sensing.

Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories

S. Deleonibus, Gerard Ghibaudo, G. Pananakakis, 2008 .

Ferrocene and porphyrin monolayers on Si(100) surfaces: preparation and effect of linker length on electron transfer.

Eugénie Martinez, Françoise Vinet, Kai Huang, 2009, Chemphyschem : a European journal of chemical physics and physical chemistry.

Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact

Matthew Charles, Marc Plissonnier, Charlotte Gillot, 2017, Scientific Reports.

Investigation of SiO2/HfO2 gate stacks for application to non-volatile memory devices

Simon Deleonibus, Gerard Ghibaudo, Giuseppe Nicotra, 2005 .

Study on C60 Doped PMMA for Organic Memory Devices

Gerard Ghibaudo, C. Licitra, Raluca Tiron, 2010 .

Development of organic resistive memory for flexible electronics

Romain Coppard, Raluca Tiron, M. Charbonneau, 2012 .

Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories

X. Garros, S. Deleonibus, Gerard Ghibaudo, 2009, ESSDERC 2009.

Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMs

G. Auvert, L. Perniola, Andrea Fantini, 2011 .

Accurate analysis of parasitic current overshoot during forming operation in RRAMs

G. Reimbold, J. Cluzel, V. Jousseaume, 2011 .

Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

Jordi Suñé, Shibing Long, Ming Liu, 2013, Scientific Reports.