文
论文分享
演练场
杂货铺
论文推荐
字
编辑器下载
登录
注册
A. Dixit
发表
A 0.314/spl mu/m/sup 2/ 6T-SRAM cell build with tall triple-gate devices for 45nm applications using 0.75NA 193nm lithography
R. Rooyackers, M. Van Hove, K. Ronse, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..