Umesh K. Mishra

Umesh K. Mishra, J. B. Shealy, U. Mishra, 1994, Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).

Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures

Umesh K. Mishra, Alessandro Chini, Tomas Palacios, 2003 .

Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure

Christiane Poblenz, James S. Speck, William C. Mitchel, 2000 .

Use of Sub-nanometer Thick AlN to Arrest Diffusion of Ion-Implanted Mg into Regrown AlGaN/GaN Layers

Umesh K. Mishra, Srabanti Chowdhury, Jing Lu, 2011 .

Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers

James S. Speck, Umesh K. Mishra, Sarah L. Keller, 2000 .

AlGaN/GaN transistors for power electronics

Umesh K. Mishra, 2010, 2010 International Electron Devices Meeting.

Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

James S. Speck, Umesh K. Mishra, Tomas Palacios, 2011 .

Systematic characterization of Cl 2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2002 .

Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN

Umesh K. Mishra, Matteo Meneghini, Davide Bisi, 2017 .

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures

Lester F. Eastman, Martin Eickhoff, James S. Speck, 2003 .

Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing

James S. Speck, Umesh K. Mishra, Patrick Waltereit, 2004 .

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

John F. Muth, H. C. Casey, Umesh K. Mishra, 1997 .

Gallium nitride based transistors

Daniel S. Green, Umesh K. Mishra, S. P. DenBaars, 2001 .

Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Surface Potential at as‐Grown GaN(0001) MBE Layers

Umesh K. Mishra, Sarah L. Keller, Angela Rizzi, 2002 .

Localized exciton dynamics in nonpolar (112¯0) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2005 .

Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2006 .

Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy

Christiane Poblenz, James S. Speck, Umesh K. Mishra, 2000 .

Optimization of AlGaN/GaN HEMTs for high frequency operation

Umesh K. Mishra, S. P. DenBaars, Tomas Palacios, 2006 .

Piezoelectric surface barrier lowering applied to InGaN/GaN field emitter arrays

Umesh K. Mishra, S. P. DenBaars, Peter Kozodoy, 1998 .

Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1998 .

N-Polar Deep Recess MISHEMTs With Record 2.9 W/mm at 94 GHz

Umesh K. Mishra, Brian Romanczyk, Stacia Keller, 2016, IEEE Electron Device Letters.

ENHANCED MG DOPING EFFICIENCY IN AL0.2GA0.8N/GAN SUPERLATTICES

Umesh K. Mishra, Peter Kozodoy, Steven P. DenBaars, 1999 .

Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer

Shuji Nakamura, Umesh K. Mishra, S. P. DenBaars, 2009 .

Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors

Jaime A. Freitas, James S. Speck, Umesh K. Mishra, 2001 .

Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2002 .

Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 2006 .

Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition

Enrico Zanoni, Umesh K. Mishra, Chirag Gupta, 2018 .

Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors

Christiane Poblenz, James S. Speck, Umesh K. Mishra, 2004 .

Effect of doping and polarization on carrier collection in InGaN quantum well solar cells

James S. Speck, Shuji Nakamura, Robert M. Farrell, 2011 .

Electrical characterization of GaN p-n junctions with and without threading dislocations

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1998 .

Field Effect Transistors

Jasprit Singh, Umesh K. Mishra, 2008 .

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

James S. Speck, Umesh K. Mishra, James Ibbetson, 2000 .

Cl2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors

Umesh K. Mishra, Evelyn L. Hu, Stacia Keller, 1999 .

Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz

Umesh K. Mishra, Rongming Chu, Stacia Keller, 2007 .

Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 2008 .

Monolithic millimeter-wave distributed amplifiers using AlGaN/GaN HEMTs

Robert A. York, Umesh K. Mishra, U. Mishra, 2008, 2008 IEEE MTT-S International Microwave Symposium Digest.

Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability

Umesh K. Mishra, Martin Kuball, Michael J. Uren, 2012 .

Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

Steven A. Ringel, James S. Speck, Daniel S. Green, 2005 .

N-polar GaN∕AlGaN∕GaN high electron mobility transistors

James S. Speck, Umesh K. Mishra, Siddharth Rajan, 2007 .

Large area GaN HEMT power devices for power electronic applications: switching and temperature characteristics

David R. Clarke, Umesh K. Mishra, Naiqian Zhang, 2003, IEEE 34th Annual Conference on Power Electronics Specialist, 2003. PESC '03..

Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2013 .

Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells

Umesh K. Mishra, S. P. DenBaars, Evelyn L. Hu, 1998 .

Integration of Ba Sr TiO Thin Films With AlGaN/GaN HEMT Circuits

Hongtao Xu, Robert A. York, Umesh K. Mishra, 2004 .

Current status and scope of gallium nitride-based vertical transistors for high-power electronics application

Umesh K. Mishra, Srabanti Chowdhury, Man Hoi Wong, 2013 .

Solar-blind AlGaN-based inverted heterostructure photodiodes

Umesh K. Mishra, Bernd Keller, Giacinta Parish, 2000 .

Hexagonal Truncated Pyramidal Light Emitting Diodes through Wafer Bonding of ZnO to GaN, Laser Lift-off, and Photo Chemical Etching

Shuji Nakamura, Umesh K. Mishra, Akihiko Murai, 2008 .

Optimization of AlGaN∕GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching

Umesh K. Mishra, Evelyn L. Hu, Ilan Ben-Yaacov, 2004 .

Polarization-enhanced Mg doping of AlGaN/GaN superlattices

Adam W. Saxler, William C. Mitchel, Umesh K. Mishra, 1999 .

CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES 3202 Controlled doping of phthalocyanine layers by cosublimation with acceptor molecules: A systematic Seebeck and conductivity study

Robert A Norwood, Stephen M. Emo, Karl Leo, 1998 .

MOCVD growth of AlGaN films for solar blind photodetectors

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 2004 .

Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition

James S. Speck, Umesh K. Mishra, Arpan Chakraborty, 2004 .

Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition

Umesh K. Mishra, S. P. DenBaars, Bernd Keller, 1997 .

Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2004 .

GAIN SPECTROSCOPY ON INGAN/GAN QUANTUM WELL DIODES

Larry A. Coldren, Yoon-Kyu Song, Umesh K. Mishra, 1997 .

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate

James S. Speck, Robert A. York, Umesh K. Mishra, 2004 .

Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

James S. Speck, Umesh K. Mishra, Srabanti Chowdhury, 2015 .

Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films

James S. Speck, Umesh K. Mishra, Patrick Waltereit, 2003 .

On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2016 .

Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)

Umesh K. Mishra, Chirag Gupta, Dong Ji, 2018, IEEE Electron Device Letters.

High quality AlN grown on SiC by metal organic chemical vapor deposition

Shuji Nakamura, Umesh K. Mishra, S. P. DenBaars, 2008 .

High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts

Umesh K. Mishra, Evelyn L. Hu, R. Vetury, 1998 .

Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Steven A. Ringel, Umesh K. Mishra, Siddharth Rajan, 2013 .

Capture Kinetics of Electron Traps in MBE‐Grown n‐GaN

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2001 .

Two-photon absorption study of GaN

Fu-Jen Kao, Umesh K. Mishra, M. P. Mack, 2000 .

$f_{T}$ and $f_{\rm MAX}$ of 47 and 81 GHz , Respectively, on N-Polar GaN/AlN MIS-HEMT

James S. Speck, Umesh K. Mishra, Nidhi, 2009 .

Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors

Christiane Poblenz, James S. Speck, Umesh K. Mishra, 2004 .

Depletion region effects in Mg-doped GaN

Umesh K. Mishra, Peter Kozodoy, Steven P. DenBaars, 2000 .

Coupling of InGaN quantum-well photoluminescence to silver surface plasmons

Eli Yablonovitch, Umesh K. Mishra, S. P. DenBaars, 1999 .

Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2005 .

The First Wafer-fused AlGaAs-GaAs-GaN Heterojunction Bipolar Transistor

Larry A. Coldren, Umesh K. Mishra, Evelyn L. Hu, 2002 .

Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB

Umesh K. Mishra, S. P. DenBaars, Bernd Keller, 2001 .

AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit

James S. Speck, Umesh K. Mishra, Siddharth Rajan, 2008 .

12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate

Umesh K. Mishra, Alessandro Chini, Sarah L. Keller, 2004 .

Transient characteristics of GaN-based heterostructure field-effect transistors

E. Kohn, Umesh K. Mishra, T. Jenkins, 2003 .

Photoluminescence study of hydrogenated aluminum oxide–semiconductor interface

Umesh K. Mishra, Ying-Lan Chang, Evelyn L. Hu, 1997 .

Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

Umesh K. Mishra, S. P. DenBaars, Sarah L. Keller, 2008 .

Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1995 .

Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2013 .

The impact of epitaxial layer design and quality on GalnAs/AllnAs high-electron-mobility transistor performance

April S. Brown, Umesh K. Mishra, M. J. Delaney, 1988 .

Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2005 .

Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

Umesh K. Mishra, Brian Romanczyk, Stacia Keller, 2018, IEEE Transactions on Electron Devices.

High linearity, robust, AlGaN-GaN HEMTs for LNA and receiver ICs

Umesh K. Mishra, Y. Wu, Primit Parikh, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

Umesh K. Mishra, Steven P. DenBaars, Nikholas G. Toledo, 2008 .

Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition

Daniel S. Green, Umesh K. Mishra, Peter Kozodoy, 2003 .

Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures

James S. Speck, Umesh K. Mishra, Stacia Keller, 2003 .

Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN

Umesh K. Mishra, S. Keller, Steven P. DenBaars, 2001 .

Hydrogen passivation of deep levels in n–GaN

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2000 .

“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells

Umesh K. Mishra, Yong-Hoon Cho, Arthur J. Fischer, 1998 .

Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys

James S. Speck, Umesh K. Mishra, Debdeep Jena, 2002 .

Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

Umesh K. Mishra, Leonard J. Brillson, Jesus A. del Alamo, 2009 .

Device performance of submicrometre MESFETs with LTG passivation

Arthur C. Gossard, Umesh K. Mishra, N. X. Nguyen, 1993 .

Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

James S. Speck, Umesh K. Mishra, Tomas Palacios, 2007 .

Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

James S. Speck, Umesh K. Mishra, Yuval Golan, 1999 .

Next generation defect characterization in nitride HEMTs

Steven A. Ringel, Christiane Poblenz, James S. Speck, 2011 .

2.1 A/mm current density AlGaN/GaN HEMT

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2003 .

Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2000 .

The toughest transistor yet [GaN transistors]

Umesh K. Mishra, L. F. Eastman, L. Eastman, 2002 .

Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition

James S. Speck, Xinru Wu, Umesh K. Mishra, 1998 .

Rutile films grown by molecular beam epitaxy on GaN and AlGaN∕GaN

James S. Speck, Robert A. York, Umesh K. Mishra, 2005 .

Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor

Steven A. Ringel, Christiane Poblenz, James S. Speck, 2012 .

GaN based microwave power HEMTs

Umesh K. Mishra, S. P. DenBaars, Y.-F. Wu, 1998 .

Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction

James S. Speck, Umesh K. Mishra, James Ibbetson, 2000 .

Broad-band microwave power amplifiers in GaN technology

Mark J. W. Rodwell, S. I. Long, Umesh K. Mishra, 2000, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084).

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

Steven A. Ringel, Umesh K. Mishra, S. P. DenBaars, 2013 .

Integration of>tex /tex

Hongtao Xu, Robert A. York, Umesh K. Mishra, 2004 .

Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding

Shuji Nakamura, Umesh K. Mishra, Hisashi Masui, 2006 .

A parameter extraction technique for heterojunction bipolar transistors

Robert J. Trew, Joseph F. Jensen, Umesh K. Mishra, 1989, IEEE MTT-S International Microwave Symposium Digest.

Very high voltage AlGaN/GaN high electron mobility transistors using a field plate deposited on a stepped insulator

Shreepad Karmalkar, Umesh K. Mishra, U. Mishra, 2001 .

Multi‐color light emitting diode using polarization‐induced tunnel junctions

Umesh K. Mishra, U. Mishra, M. Grundmann, 2007 .