Tim Minvielle

A 130.7mm2 2-layer 32Gb ReRAM memory device in 24nm technology

Masahide Matsumoto, Hirofumi Inoue, Liping Peng, 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology

Masahide Matsumoto, Hirofumi Inoue, Takeshi Yamaguchi, 2014, IEEE Journal of Solid-State Circuits.