Jeong Hwan Han

发表

Four-Bits-Per-Cell Operation in an HfO2 -Based Resistive Switching Device.

Sang Gil Lee, Kyung Min Kim, Cheol Seong Hwang, 2017, Small.

Highly Improved Uniformity in the Resistive Switching Parameters of TiO2 Thin Films by Inserting Ru Nanodots

Cheol Seong Hwang, Kyung Jean Yoon, Ji Sim Jung, 2013, Advanced materials.

Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures

Cheol Seong Hwang, Ji-Won Choi, Jin Sang Kim, 2017 .

Al‐Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

Cheol Seong Hwang, Seungwu Han, Jeong Hwan Han, 2008 .

Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

Sang Woon Lee, Cheol Seong Hwang, Seungwu Han, 2010 .

Schottky diode with excellent performance for large integration density of crossbar resistive memory

Jong-Ho Lee, Cheol Seong Hwang, Kyung Jean Yoon, 2012 .

A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory

Cheol Seong Hwang, Jun Yeong Seok, Gun Hwan Kim, 2010, Nanotechnology.

Growth of Conductive SrRuO3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO2 Layers

Sang Woon Lee, Cheol Seong Hwang, Woongkyu Lee, 2012 .