Parhat Ahmet

发表

Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement

Hiroshi Iwai, Nobuyuki Sugii, Chunmeng Dou, 2014, Microelectron. Reliab..

Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2011, Microelectron. Reliab..

Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer

Hiroshi Iwai, Nobuyuki Sugii, Chunmeng Dou, 2012, Microelectron. Reliab..

Combinatorial approach to the interface structure characterizations of SrTiO3 on Si(100)

Hideomi Koinuma, Masahiro Takakura, Masaki Takeguchi, 2001, SPIE OPTO.

Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2010, Microelectron. Reliab..

金属/Hf系高誘電率絶縁膜界面の統一理論 : ゲート金属の設計指針( 先端CMOSデバイス・プロセス技術)

白石賢二, 赤坂泰志, 宮崎誠一, 2006 .

Parasitics effects in multi gate MOSFETs

Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, 2006, 2006 International Workshop on Nano CMOS.

Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2008, Microelectron. Reliab..

Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2012, Microelectron. Reliab..

金属電極/high-k絶縁膜キャパシタのフラットバンド電圧特性に与える仕事関数変調及び熱処理の影響(ゲート絶縁膜,容量膜,機能膜及びメモリ技術)

白石賢二, 赤坂泰志, 健治大毛利, 2006 .

Combinatorial methodology for optimizing oxide/semiconductor interface with atomic interfacial layers

Hideomi Koinuma, Masahiro Takakura, Parhat Ahmet, 2001, SPIE OPTO.

Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness

Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, 2010, Microelectron. Reliab..

(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

Hiroshi Iwai, Kenji Ohmori, Kuniyuki Kakushima, 2011, Microelectron. Reliab..

Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2006, IEICE Electron. Express.

Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2007, IEICE Electron. Express.

キャリア移動度評価によるシリコンナノワイヤトランジスタの電気特性解析(ゲート絶縁薄膜、容量膜、機能膜及びメモリ技術)

健治大毛利, 山田啓作, Parhat Ahmet, 2010, SDM 2010.

SrO capping effect for La2O3/Ce-silicate gate dielectrics

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2010, Microelectron. Reliab..

Si nanowire FET and its modeling

Hiroshi Iwai, Kenji Ohmori, Kuniyuki Kakushima, 2011, Science China Information Sciences.

Vapor–liquid–solid tri-phase pulsed-laser epitaxy of RBa2Cu3O7−y single-crystal films

Hideomi Koinuma, Parhat Ahmet, T. Itoh, 2002 .

Selection of rare earth silicates for highly scaled gate dielectrics

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2010 .

Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide

Masashi Kawasaki, Hideomi Koinuma, Parhat Ahmet, 2001, Science.

Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2009 .

Combinatorial screening of ternary NiO–Mn2O3–CuO composition spreads

Atsushi Yamamoto, Parhat Ahmet, Toyohiro Chikyow, 2005 .

Effect of Deposition Temperature on Chemical Structure of Lanthanum Oxide/Si Interface Structure

Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, 2006 .

Fabrication of lattice-tunable Ba1−xSrxTiO3 buffers on a SrTiO3 substrate

Masashi Kawasaki, M. Ohtani, Hideomi Koinuma, 2004 .

Electrical characterization of Si nanowire field-effect transistors with semi gate-around structure suitable for integration

Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, 2010 .

Gate semi-around Si nanowire FET fabricated by conventional CMOS process with very high drivability

Hiroshi Iwai, Kenji Natori, Kuniyuki Kakushima, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Mobility Degradation Analysis for La2O3 nMISFET

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2006 .

Evaluation of Lateral Ni Diffusion in Si Nanowire Schottky Contact

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2009 .

Pulsed Laser Epitaxy and Magnetic Properties of Single Phase Y-Type Magnetoplumbite Thin Films

Masashi Kawasaki, Hideomi Koinuma, Koichiro Ueno, 2001 .

Experimental study for high effective mobility with directly deposited HfO2/La2O3 MOSFET

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2009 .

Annealing Reaction for Ni Silicidation of Si Nanowire

Hiroshi Iwai, Nobuyuki Sugii, Kenji Natori, 2009 .

Current conduction and stability of CeO2/La2O3 stacked gate dielectric

Hiroshi Iwai, Shurong Dong, Kuniyuki Kakushima, 2012 .

A combinatorial approach in oxide/semiconductor interface research for future electronic devices

Hideomi Koinuma, Masahiro Takakura, Parhat Ahmet, 2002 .

Development of scanning microwave microscope with a lumped-constant resonator probe for high-throughput characterization of combinatorial dielectric materials

Masashi Kawasaki, Daisuke Komiyama, Hideomi Koinuma, 2002 .

Valence number transition and silicate formation of cerium oxide films on Si(100)

H. Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2012 .

Impact of Thin La2O3 Insertion for HfO2 MOSFET

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2008 .

High-performance Si Nanowire FET with a semi gate-around structure suitable for integration

Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, 2009, 2009 Proceedings of the European Solid State Device Research Conference.

Properties of CeOx/La2O3 gate dielectric and its effects on the MOS transistor characteristics

H. Iwai, Kuniyuki Kakushima, Hei Wong, 2012 .

Structural control and combinatorial doping of titanium dioxide thin films by laser molecular beam epitaxy

Masashi Kawasaki, Hideomi Koinuma, Parhat Ahmet, 2002 .