Hitoshi Wakabayashi

发表

Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement

Hiroshi Iwai, Nobuyuki Sugii, Chunmeng Dou, 2014, Microelectron. Reliab..

Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing

Hiroshi Iwai, Yiming Lei, Kuniyuki Kakushima, 2018, Microelectron. Reliab..

3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)

Ichiro Omura, Hiroshi Iwai, M. Kobayashi, 2017, 2017 IEEE 12th International Conference on ASIC (ASICON).

An Overview of GaN-based P- and N-channel Power Integrated Circuit Technologies

Hiroshi Iwai, Kuniyuki Kakushima, Hiromichi Ohashi, 2016 .

Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors

Hiroshi Iwai, Yiming Lei, Kuniyuki Kakushima, 2018, Microelectron. Reliab..

La2O3 gate dielectrics for AlGaN/GaN HEMT

Hiroshi Iwai, Kuniyuki Kakushima, Hitoshi Wakabayashi, 2016, Microelectron. Reliab..

A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2014, Microelectron. Reliab..

Uniform Raised-Salicide Technology for High-Performance CMOS Devices

Hitoshi Wakabayashi, 2002 .

Spintronics Materials and Devices for Working Memory Technology

Tetsuo Endoh, Yasuo Ando, Takahiro Hanyu, 2017 .

Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Switching of 3300V Scaled IGBT by 5V Gate Drive

Masanori Tsukuda, Ichiro Omura, Hiroshi Iwai, 2019, 2019 IEEE 13th International Conference on ASIC (ASICON).

Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current

Hiroshi Iwai, Kuniyuki Kakushima, Hitoshi Wakabayashi, 2016, Microelectron. Reliab..

Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2016, Microelectron. Reliab..

A 0.25μm CMOS 0.9V 100MHz DSP Core

Tohru Mogami, Hiroshi Ito, Koichiro Furuta, 1995 .

Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes

Wei Li, Hiroshi Iwai, Nobuyuki Sugii, 2015, Microelectron. Reliab..

Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately

Ken Takeuchi, Kuniyuki Kakushima, Toshiro Hiramoto, 2018, 2018 48th European Solid-State Device Research Conference (ESSDERC).

New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment

Ken Takeuchi, Hiroshi Iwai, Kuniyuki Kakushima, 2018, 2018 IEEE Symposium on VLSI Circuits.

Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity

Wei Li, Hiroshi Iwai, Nobuyuki Sugii, 2015, Microelectron. Reliab..

Hitoshi Wakabayashi Laboratory, Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Tokyo Tech)

Hitoshi Wakabayashi, 2021 .

Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

Hiroshi Iwai, Nobuyuki Sugii, Kenji Natori, 2014, IEEE Transactions on Electron Devices.

GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

Hiroshi Iwai, Kuniyuki Kakushima, Hiromichi Ohashi, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based electrodes using CeOx buffer layer

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2014 .

Mobility and Velocity Enhancement Effects of High Uniaxial Stress on Si (100) and (110) Substrates for Short-Channel pFETs

Hitoshi Wakabayashi, Atsushi Ogura, Naoki Nagashima, 2010, IEEE Transactions on Electron Devices.

An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform

Hiroshi Iwai, Kuniyuki Kakushima, Hiromichi Ohashi, 2015, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).