Kazuo Tsutsui

发表

Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement

Hiroshi Iwai, Nobuyuki Sugii, Chunmeng Dou, 2014, Microelectron. Reliab..

Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2011, Microelectron. Reliab..

Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2011 .

Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer

Hiroshi Iwai, Nobuyuki Sugii, Chunmeng Dou, 2012, Microelectron. Reliab..

Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing

Hiroshi Iwai, Yiming Lei, Kuniyuki Kakushima, 2018, Microelectron. Reliab..

高信頼性と低ゲート漏れ電流を用いたAlGaN/GaNH EMTのためのポリシリコンゲート電極【Powered by NICT】

Hiroshi Iwai, Kuniyuki Kakushima, Kazuo Tsutsui, 2016 .

3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)

Ichiro Omura, Hiroshi Iwai, M. Kobayashi, 2017, 2017 IEEE 12th International Conference on ASIC (ASICON).

III. Digital Mapping Application System (Part2)

Kazuo Tsutsui, Mitsuo Hayami, 1991 .

An Overview of GaN-based P- and N-channel Power Integrated Circuit Technologies

Hiroshi Iwai, Kuniyuki Kakushima, Hiromichi Ohashi, 2016 .

Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors

Hiroshi Iwai, Yiming Lei, Kuniyuki Kakushima, 2018, Microelectron. Reliab..

Durability evaluation of hexagonal WO3 electrode for lithium ion secondary batteries

Wei Li, Hiroshi Iwai, Miho Nakamura, 2017, Microelectron. Reliab..

Near-field planar apertured probe array for optical near-field memory

Motoichi Ohtsu, Takashi Yatsui, Kazuo Tsutsui, 1998, Optics & Photonics.

Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2010, Microelectron. Reliab..

La2O3 gate dielectrics for AlGaN/GaN HEMT

Hiroshi Iwai, Kuniyuki Kakushima, Hitoshi Wakabayashi, 2016, Microelectron. Reliab..

Enhancing throughput over 100 times by a triple-tapered structure for a near-field optical fiber probe

Motoichi Ohtsu, Takashi Yatsui, Kazuo Tsutsui, 1998, Optics & Photonics.

Parasitics effects in multi gate MOSFETs

Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, 2006, 2006 International Workshop on Nano CMOS.

A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2014, Microelectron. Reliab..

Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2008, Microelectron. Reliab..

Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2012, Microelectron. Reliab..

Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current

Hiroshi Iwai, Kuniyuki Kakushima, Hitoshi Wakabayashi, 2016, Microelectron. Reliab..

Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2016, Microelectron. Reliab..

Electrical properties of vacuum annealed La2O3 thin films grown by E-beam evaporation

Hiroshi Iwai, Kazuo Tsutsui, Yongshik Kim, 2005, Microelectron. J..

Combined Detection Method in a Sea Surveillance System

Yoshiki Kobayashi, Hirotada Ueda, Kazuya Takahashi, 2005, IEICE Trans. Inf. Syst..

Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness

Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, 2010, Microelectron. Reliab..

(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

n~+およびp~+Si底部電極上にCeO_xバッファ層を持つ薄いSiO_2層の抵抗スイッチング特性【Powered by NICT】

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2016 .

Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2006, IEICE Electron. Express.

Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2007, IEICE Electron. Express.

Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes

Wei Li, Hiroshi Iwai, Nobuyuki Sugii, 2015, Microelectron. Reliab..

SrO capping effect for La2O3/Ce-silicate gate dielectrics

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2010, Microelectron. Reliab..

Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately

Ken Takeuchi, Kuniyuki Kakushima, Toshiro Hiramoto, 2018, 2018 48th European Solid-State Device Research Conference (ESSDERC).

New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment

Ken Takeuchi, Hiroshi Iwai, Kuniyuki Kakushima, 2018, 2018 IEEE Symposium on VLSI Circuits.

Subwavelength-sized phase-change recording with a silicon planar apertured probe

Motoichi Ohtsu, Takashi Yatsui, Kazuo Tsutsui, 1999, Optics & Photonics.

Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity

Wei Li, Hiroshi Iwai, Nobuyuki Sugii, 2015, Microelectron. Reliab..

Parasitics effects in multi gate MOSFETs

Hiroshi Iwai, Kazuo Tsutsui, A. Mangal, 2006 .

Selection of rare earth silicates for highly scaled gate dielectrics

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2010 .

Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2009 .

Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

Hiroshi Iwai, Nobuyuki Sugii, Kenji Natori, 2014, IEEE Transactions on Electron Devices.

Effect of Deposition Temperature on Chemical Structure of Lanthanum Oxide/Si Interface Structure

Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, 2006 .

Analysis of variation in leakage currents of Lanthana thin films

Hiroshi Iwai, Kazuo Tsutsui, Shun-ichiro Ohmi, 2005 .

Mobility Degradation Analysis for La2O3 nMISFET

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2006 .

Evaluation of Lateral Ni Diffusion in Si Nanowire Schottky Contact

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2009 .

GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

Hiroshi Iwai, Kuniyuki Kakushima, Hiromichi Ohashi, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Experimental study for high effective mobility with directly deposited HfO2/La2O3 MOSFET

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2009 .

B_2_H_6_ Plasma Doping with In-situ He Pre-amorphization

Kazuo Tsutsui, 筒井一生, 2004 .

A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based electrodes using CeOx buffer layer

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2014 .

Low-Frequency Noise Characteristics of MISFET's with La2O3 Gate Dielectrics

Hiroshi Iwai, Kazuo Tsutsui, Shun-ichiro Ohmi, 2003 .

Annealing Reaction for Ni Silicidation of Si Nanowire

Hiroshi Iwai, Nobuyuki Sugii, Kenji Natori, 2009 .

Space-Charge-Limited Currents in La2O3 Thin Films Deposited by E-Beam Evaporation after Low Temperature Dry-Nitrogen Annealing

Hiroshi Iwai, Kazuo Tsutsui, Shun-ichiro Ohmi, 2005 .

Effect of Post-Metallization Annealing on Electrical Characteristics of La2O3 Gate Thin Films

Hiroshi Iwai, Kazuo Tsutsui, Shun-ichiro Ohmi, 2005 .

Nanometric aperture arrays fabricated by wet and dry etching of silicon for near-field optical storage application

Motoichi Ohtsu, Kazuo Tsutsui, Nobufumi Atoda, 1999 .

Site controlled metal and semiconductor quantum dots on epitaxial fluoride films

Marie Mochizuki, Kazuo Tsutsui, Koji Kawasaki, 1999 .

Valence number transition and silicate formation of cerium oxide films on Si(100)

H. Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2012 .

An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform

Hiroshi Iwai, Kuniyuki Kakushima, Hiromichi Ohashi, 2015, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Impact of Thin La2O3 Insertion for HfO2 MOSFET

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2008 .

Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2005 .

Effect of Oxygen for Ultra-Thin La2O3 Film Deposition

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2006 .