Michael L. Alles

发表

Investigation of second-harmonic generation for SOI wafer metrology

R. P. Dolan, R. Pasternak, Bongim Jun, 2006 .

Advanced node-splitting techniques for radiation-hardened analog/mixed-signal circuits

Bharat L. Bhuva, W. Timothy Holman, Jeffrey S. Kauppila, 2016, 2016 IEEE Aerospace Conference.

Efficient Reliability Testing of Emerging Memory Technologies Using Multiple Radiation Sources

Dimitri Linten, Nicholas C. Hooten, En Xia Zhang, 2015 .

Total-Ionizing-Dose Induced Timing Window Violations in CMOS Microcontrollers

Gabor Karsai, Ronald D. Schrimpf, Nagabhushan Mahadevan, 2014, IEEE Transactions on Nuclear Science.

RadFxSat: A Flight Campaign for Recording Single-Event Effects in Commercial Off-the-Shelf Microelectronics

Lloyd W. Massengill, Ronald D. Schrimpf, Daniel M. Fleetwood, 2017, 2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).

Characterization of Si-on-insulator buried layers by FTIR and scatterometry

Victor A. Yakovlev, Sylvie Bosch-Charpenay, Peter A. Rosenthal, 2000, SPIE Optics + Photonics.

Accurate numerical models for simulation of radiation events in nano-scale semiconductor devices

Michael L. Alles, Alexander I. Fedoseyev, Marek Turowski, 2008, Math. Comput. Simul..

Keynote Address: "Nanotechnology: What is It and How Does it Apply to Me in Semiconductor Manufacturing" Deb Newberry, Author, Executive Director, The Nanotechnology Group

Ronald D. Schrimpf, R. Pasternak, Daniel M. Fleetwood, 2006 .

The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies

Ronald D. Schrimpf, Daniel M. Fleetwood, Michael L. Alles, 2012, Microelectron. Reliab..

IN-SITU CRYOGENIC SEE TESTING OF HIGH-SPEED SiGe BiCMOS DEVICES

Jonathan A. Pellish, Michael L. Alles, Robert A. Reed, 2007 .

Mitigation of Single-Event Charge Sharing in a Commercial FPGA Architecture

Lloyd W. Massengill, Ernesto Chan, Michael L. Alles, 2014, IEEE Transactions on Nuclear Science.

Evaluating manufacturability of radiation-hardened SOI substrates

Michael L. Alles, Pascale Gouker, Patrick J. McMarr, 2001, 2001 IEEE International SOI Conference. Proceedings (Cat. No.01CH37207).

Multiscale Numerical Models for Simulation of Radiation Events in Semiconductor Devices

Michael L. Alles, Alexander I. Fedoseyev, Marek Turowski, 2008, ICCS.

Multi-cell soft errors at the 16-nm FinFET technology node

Bharat L. Bhuva, Lloyd W. Massengill, Michael L. Alles, 2015, 2015 IEEE International Reliability Physics Symposium.

Impact of process variability on the radiation-induced soft error rate of decananometer SRAMs in hold and read conditions

Paul Zuber, Dimitri Linten, Eddy Simoen, 2011 .

Range-Finding Sensor Degradation in Gamma Radiation Environments

Gabor Karsai, Nagabhushan Mahadevan, Michael L. Alles, 2015, IEEE Sensors Journal.

Application of a novel test system to characterize single-event transients at cryogenic temperatures

Bharat L. Bhuva, Lloyd W. Massengill, Michael L. Alles, 2009, 2009 International Semiconductor Device Research Symposium.

The sensitivity of radiation-induced leakage to STI topology and sidewall doping

John Sochacki, Lloyd W. Massengill, Ronald D. Schrimpf, 2011, Microelectron. Reliab..

Soft ErrorConsiderations forMulticore MicroprocessorDesign

Bharat L. Bhuva, R. D. Schrimpf, Michael L. Alles, 2007 .

Geometry-Aware Single-Event Enabled Compact Models for Sub-50 nm Partially Depleted Silicon-on-Insulator Technologies

Jeffrey S. Kauppila, Lloyd W. Massengill, Ronald D. Schrimpf, 2015, IEEE Transactions on Nuclear Science.

Advanced manufacturing of SIMOX for low power electronics

Michael L. Alles, Wade Krull, 1996 .

Bayesian Inference Modeling of Total Ionizing Dose Effects on System Performance

Gabor Karsai, Arthur F. Witulski, Eric J. Barth, 2015, IEEE Transactions on Nuclear Science.

CubeSats and Crowd-Sourced Monitoring for Single Event Effects Hardness Assurance

Lloyd W. Massengill, Ronald D. Schrimpf, Daniel M. Fleetwood, 2017, IEEE Transactions on Nuclear Science.

The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture

Ronald D. Schrimpf, Subramanian S. Iyer, Michael L. Alles, 2020, IEEE Transactions on Nuclear Science.

Analysis of Bulk FinFET Structural Effects on Single-Event Cross Sections

Bharat L. Bhuva, W. Timothy Holman, Jeffrey S. Kauppila, 2017, IEEE Transactions on Nuclear Science.

System Health Awareness in Total-Ionizing Dose Environments

Gabor Karsai, Arthur F. Witulski, Eric J. Barth, 2015, IEEE Transactions on Nuclear Science.

Spatial and Temporal Considerations for Analysis of Single-Event Mechanisms in FinFET Technologies

L. W. Massengill, Bharat L. Bhuva, Robert A. Reed, 2017 .

Radiation Response and Adaptive Control-Based Degradation Mitigation of MEMS Accelerometers in Ionizing Dose Environments

Gabor Karsai, Arthur F. Witulski, Eric J. Barth, 2017, IEEE Sensors Journal.

Total-ionizing-dose effects and reliability of carbon nanotube FET devices

Ronald D. Schrimpf, Daniel M. Fleetwood, Michael L. Alles, 2014, Microelectron. Reliab..

14/16nm FinFET Radiation Response Characterization

J. S. Kauppila, Lloyd W. Massengill, T. D. Loveless, 2016 .

Proton-induced SEU in SiGe digital logic at cryogenic temperatures

John D. Cressler, Michael L. Alles, Paul W. Marshall, 2007 .

Understanding Charge Collection Mechanisms in InGaAs FinFETs Using High-Speed Pulsed-Laser Transient Testing With Tunable Wavelength

En Xia Zhang, Rong Jiang, Ronald D. Schrimpf, 2017, IEEE Transactions on Nuclear Science.

Total-ionizing-dose radiation response of partially-depleted SOI devices

En Xia Zhang, Ronald D. Schrimpf, Michael L. Alles, 2010, 2010 IEEE International SOI Conference (SOI).

Effects of Energy-Deposition Variability on Soft Error Rate Prediction

Nicholas C. Hooten, Robert C. Baumann, Ronald D. Schrimpf, 2015, IEEE Transactions on Nuclear Science.

Electrical Stress and Total Ionizing Dose Effects on ${\hbox {MoS}}_{2}$ Transistors

Bin Wang, En Xia Zhang, Ronald D. Schrimpf, 2014, IEEE Transactions on Nuclear Science.

State and Angular Dependence of Single-Event Upsets in an Asymmetric RC-Hardened SRAM Using Deep Trench Capacitors

Lloyd W. Massengill, Ernesto Chan, Ronald D. Schrimpf, 2014, IEEE Transactions on Nuclear Science.

TID and Displacement Damage Resilience of 1T1R

Dimitri Linten, Nicholas C. Hooten, Robin Degraeve, 2014 .

Dynamic Modeling of Radiation-Induced State Changes in ${\hbox {HfO}_2}/\hbox {Hf}$ 1T1R RRAM

Dimitri Linten, Nicholas C. Hooten, En Xia Zhang, 2014, IEEE Transactions on Nuclear Science.

Impact of process variability on the radiation-induced soft error of nanometer-scale srams in hold and read conditions

Paul Zuber, Dimitri Linten, Eddy Simoen, 2011, 2011 12th European Conference on Radiation and Its Effects on Components and Systems.

Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices

Bin Wang, Sarah J. Haigh, En Xia Zhang, 2014, IEEE Transactions on Nuclear Science.

Total-Ionizing-Dose Response of Narrow, Long Channel 45 nm PDSOI Transistors

Ronald D. Schrimpf, Michael L. Alles, Patrick J. McMarr, 2014, IEEE Transactions on Nuclear Science.

Angular Effects on Single-Event Mechanisms in Bulk FinFET Technologies

W. Timothy Holman, Jeffrey S. Kauppila, Lloyd W. Massengill, 2018, IEEE Transactions on Nuclear Science.

A Comparison of the SEU Response of Planar and FinFET D Flip-Flops at Advanced Technology Nodes

W. Timothy Holman, Jeffrey S. Kauppila, Lloyd W. Massengill, 2016, IEEE Transactions on Nuclear Science.

Bias Dependence of Total Ionizing Dose Effects in SiGe-MOS FinFETs

En Xia Zhang, Gennadi Bersuker, Ronald D. Schrimpf, 2014, IEEE Transactions on Nuclear Science.

Heavy-Ion and Laser Induced Charge Collection in SiGe Channel $p{\rm MOSFETs}$

Dimitri Linten, Jerome Mitard, Nicholas C. Hooten, 2014, IEEE Transactions on Nuclear Science.