J. E. Turner

Ultrashallow Diffused Emitter-Base Profiles For Bipolar Device Applications Using Rapid Thermal Processing

P. Vande Voorde, A. Kermani, J. E. Turner, 1990, Other Conferences.

Admittance spectroscopy measurements of band offsets in Si/Si1−xGex/Si heterostructures

Judy L. Hoyt, James F. Gibbons, Theodore I. Kamins, 1992 .

Characterization of InP/GaInAs/InP heterostructures grown by organometallic vapor phase epitaxy for high-speed p-i-n photodiodes

Dieter Bimberg, Robert Hull, Shih-Yuan Wang, 1986 .

Double-diffused graded SiGe-base bipolar transistors

D. Pettengill, S. S. Laderman, Theodore I. Kamins, 1994 .

High frequency Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors

Judy L. Hoyt, Krzysztof Nauka, M. P. Scott, 1989, International Technical Digest on Electron Devices Meeting.

Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors fabricated by limited reaction processing

Judy L. Hoyt, Krzysztof Nauka, M. P. Scott, 1988, Technical Digest., International Electron Devices Meeting.