R. C. Taft

Design techniques for very low power ADCs

R. C. Taft, M. R. Tursi, A. Glenny, 2001, Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169).

A 100-MS/s 8-b CMOS subranging ADC with sustained parametric performance from 3.8 V down to 2.2 V

R. C. Taft, M. R. Tursi, 2001 .

A high-performance low-complexity bipolar technology using selective collector compensation

R. C. Taft, J. D. Hayden, D. J. Denning, 1992, 1992 International Technical Digest on Electron Devices Meeting.

An eight-terminal Kelvin-tapped bipolar transistor for extracting parasitic series resistances

James D. Plummer, R. C. Taft, 1991 .

A 100-MSPS 8-b CMOS subranging ADC with parametric operation from 3.8 V down to 2.2 V

R. C. Taft, M. R. Tursi, 2000, Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044).

Fabrication of p-channel BICFET in the Ge/sub x/Si/sub 1-x//Si system

R. C. Taft, J. D. Plummer, 1988, Technical Digest., International Electron Devices Meeting.