Montserrat Nafría

发表

Performance and Power Consumption Trade-Off in UTBB FDSOI Inverters Operated at NTV for IoT Applications

Carlos Couso, Javier Martin-Martinez, Marc Porti, 2018, IEEE Journal of the Electron Devices Society.

Threading dislocations in III-V semiconductors: Analysis of electrical conduction

Marc Porti, Montserrat Nafría, Violaine Iglesias, 2015, 2015 IEEE International Reliability Physics Symposium.

Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror

Montserrat Nafría, Javier Martín-Martínez, Rosana Rodríguez, 2007, Microelectron. Reliab..

Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale

Marc Porti, Montserrat Nafría, Xavier Aymerich, 2005, Microelectron. Reliab..

Design Considerations of an SRAM Array for the Statistical Validation of Time-Dependent Variability Models

Francisco V. Fernández, Montserrat Nafría, R. Castro-López, 2018, 2018 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD).

Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures

Marc Porti, Montserrat Nafría, K. Zhang, 2012, Microelectron. Reliab..

Reliability simulation for analog ICs: Goals, solutions, and challenges

Francisco V. Fernández, Montserrat Nafría, R. Castro-López, 2016, Integr..

Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications

Montserrat Nafría, Javier Martín-Martínez, Rosana Rodríguez, 2013, Microelectron. Reliab..

Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics

Montserrat Nafría, Rosana Rodríguez, Xavier Aymerich, 2005, Microelectron. Reliab..

Device variability tolerance of a RRAM-based self-organizing neuromorphic system

Montserrat Nafría, Francesca Campabadal, Javier Martín-Martínez, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope

Marc Porti, Montserrat Nafría, Alexander Olbrich, 2001, Microelectron. Reliab..

Shape-shifting digital hardware concept: Towards a new adaptive computing system

Montserrat Nafría, Javier Martín-Martínez, Carmen G. Almudéver, 2012, 2012 NASA/ESA Conference on Adaptive Hardware and Systems (AHS).

Statistical characterization and modeling of random telegraph noise effects in 65nm SRAMs cells

Montserrat Nafría, Antonio Rubio, Jaume Segura, 2017, 2017 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD).

Investigation of Conductivity Changes in Memristors under Massive Pulsed Characterization

Montserrat Nafría, Javier Martín-Martínez, Rosana Rodríguez, 2018, 2018 Conference on Design of Circuits and Integrated Systems (DCIS).

Lifetime Calculation Using a Stochastic Reliability Simulator for Analog ICs

Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses

Marc Porti, Montserrat Nafría, Xavier Aymerich, 2004, Microelectron. Reliab..

Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale

Marc Porti, Montserrat Nafría, Xavier Aymerich, 2009, Microelectron. Reliab..

Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs

Montserrat Nafría, Javier Martín-Martínez, Xavier Aymerich, 2013, Microelectron. Reliab..

FinFET and MOSFET preliminary comparison of gate oxide reliability

Montserrat Nafría, Guido Groeseneken, Ben Kaczer, 2006, Microelectron. Reliab..

Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions

Montserrat Nafría, Xavier Aymerich, James H. Stathis, 2007, Microelectron. Reliab..

Threshold voltage and on-current Variability related to interface traps spatial distribution

Marc Porti, Montserrat Nafría, C. Couso, 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

Weighted time lag plot defect parameter extraction and GPU-based BTI modeling for BTI variability

Francisco V. Fernández, Jörg Henkel, Montserrat Nafría, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses

Montserrat Nafría, Javier Martín-Martínez, Rosana Rodríguez, 2009, Microelectron. Reliab..

Aging in CMOS RF Linear Power Amplifiers: Experimental Comparison and Modeling

Montserrat Nafría, Javier Martín-Martínez, Rosana Rodríguez, 2019, 2019 IEEE International Symposium on Circuits and Systems (ISCAS).

A size-adaptive time-step algorithm for accurate simulation of aging in analog ICs

Francisco V. Fernández, Montserrat Nafría, R. Castro-López, 2017, 2017 IEEE International Symposium on Circuits and Systems (ISCAS).

Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM

Marc Porti, Montserrat Nafría, Xavier Aymerich, 2003, Microelectron. Reliab..

Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs

Montserrat Nafría, Javier Martín-Martínez, Xavier Aymerich, 2007, Microelectron. Reliab..

Editorial to J-EDS ESSDERC 2017 Special Issue

Montserrat Nafría, Nadine Collaert, 2018 .

Analysis of Body Bias and RTN-Induced Frequency Shift of Low Voltage Ring Oscillators in FDSOI Technology

Francisco V. Fernández, Marc Porti, Montserrat Nafría, 2018, 2018 28th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS).

Protective nanometer films for reliable Cu-Cu connections

Montserrat Nafría, Rosana Rodríguez, Guenther Benstetter, 2017, Microelectron. Reliab..

Effect of oxide breakdown on RS latches

Montserrat Nafría, Rosana Rodríguez, Xavier Aymerich, 2007, Microelectron. Reliab..

A New Time Efficient Methodology for the Massive Characterization of RTN in CMOS Devices

Francisco V. Fernández, Montserrat Nafría, Elisenda Roca, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Emerging Yield and Reliability Challenges in Nanometer CMOS Technologies

Georges G. E. Gielen, Montserrat Nafría, Guido Groeseneken, 2008, 2008 Design, Automation and Test in Europe.

Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2 Gate Oxide on MOS Structures

Montserrat Nafría, Xavier Aymerich, X. Blasco, 2002, Microelectron. Reliab..

Experimental Characterization of Time-Dependent Variability in Ring Oscillators

Francisco V. Fernández, Montserrat Nafría, R. Castro-López, 2019, 2019 16th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD).

A transistor array chip for the statistical characterization of process variability, RTN and BTI/CHC aging

Francisco V. Fernández, Montserrat Nafría, R. Castro-López, 2017, 2017 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD).

UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements

Marc Porti, Montserrat Nafría, Xavier Aymerich, 2010, Microelectron. Reliab..

A Model Parameter Extraction Methodology Including Time-Dependent Variability for Circuit Reliability Simulation

Including a stochastic model of aging in a reliability simulation flow

A new approach to the modeling of oxide breakdown on CMOS circuits

Montserrat Nafría, Rosana Rodríguez, Xavier Aymerich, 2004, Microelectron. Reliab..

Unified characterization of RTN and BTI for circuit performance and variability simulation

Montserrat Nafría, Javier Martín-Martínez, Rosana Rodríguez, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Designing guardbands for instantaneous aging effects

Montserrat Nafría, Victor M. van Santen, Hussam Amrouch, 2016, 2016 53nd ACM/EDAC/IEEE Design Automation Conference (DAC).

Characterising the surface roughness of AFM grown SiO2 on Si

Marc Porti, Montserrat Nafría, D. Hill, 2001, Microelectron. Reliab..

Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs

Montserrat Nafría, Javier Martín-Martínez, Xavier Aymerich, 2012, Microelectron. Reliab..

SPICE modelling of hot-carrier degradation in Si1-xGex S/D and HfSiON based pMOS transistors

Montserrat Nafría, Esteve Amat, Javier Martín-Martínez, 2010, Microelectron. Reliab..

CASE: A reliability simulation tool for analog ICs

New method for the automated massive characterization of Bias Temperature Instability in CMOS transistors

Francisco V. Fernández, Montserrat Nafría, R. Castro-López, 2019, 2019 Design, Automation & Test in Europe Conference & Exhibition (DATE).

Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors

Marc Porti, Montserrat Nafría, Stefan De Gendt, 2013, Microelectron. Reliab..

Connecting the physical and application level towards grasping aging effects

Jörg Henkel, Montserrat Nafría, Victor M. van Santen, 2015, 2015 IEEE International Reliability Physics Symposium.

Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors

Marc Porti, Montserrat Nafría, Wilfried Vandervorst, 2008, Microelectron. Reliab..

Generation of Lifetime-Aware Pareto-Optimal Fronts Using a Stochastic Reliability Simulator

Francisco V. Fernández, Montserrat Nafría, R. Castro-López, 2019, 2019 Design, Automation & Test in Europe Conference & Exhibition (DATE).

TiDeVa: A Toolbox for the Automated and Robust Analysis of Time-Dependent Variability at Transistor Level

An IC Array for the Statistical Characterization of Time-Dependent Variability of Basic Circuit Blocks

Automated Massive RTN Characterization Using a Transistor Array Chip

TARS: A toolbox for statistical reliability modeling of CMOS devices

Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films

Marc Porti, Montserrat Nafría, Rosana Rodríguez, 2001, Microelectron. Reliab..

Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM

Marc Porti, Montserrat Nafría, Xavier Aymerich, 2003, Microelectron. Reliab..

Influence of the manufacturing process on the electrical properties of thin (k stacks observed with CAFM

Marc Porti, Montserrat Nafría, Mario Lanza, 2007, Microelectron. Reliab..

CMOS Characterization and Compact Modelling for Circuit Reliability Simulation

Francisco V. Fernández, Montserrat Nafría, R. Castro-López, 2018, 2018 IEEE 24th International Symposium on On-Line Testing And Robust System Design (IOLTS).

A shapeshifting evolvable hardware mechanism based on reconfigurable memFETs crossbar architecture

Montserrat Nafría, Javier Martín-Martínez, Carmen G. Almudéver, 2014, Microelectron. Reliab..