B. Obradovic

Low-energy model for ion implantation of arsenic and boron into (100) single-crystal silicon

Geng Wang, Al F. Tasch, B. Obradovic, 1997, Advanced Lithography.

Experimental verification of a new physically based low-energy (<5 keV) ion implant model

Geng Wang, Al F. Tasch, B. Obradovic, 1998, Advanced Lithography.

A logic nanotechnology featuring strained-silicon

M. Bohr, S. Sivakumar, Y. El-Mansy, 2004, IEEE Electron Device Letters.

The impact of crystal cut error on the measured impurity profiles resulting from ion implantation

B. Obradovic, Al F. Tasch, Ying-Chen Chen, 2000 .

Modeling of boron, phosphorus, and arsenic implants into single-crystal silicon over a wide energy range (few keV to several MeV)

B. Obradovic, S.-H. Yang, S.J. Morris, 1996, International Electron Devices Meeting. Technical Digest.