S. J. Morris

Low-energy model for ion implantation of arsenic and boron into (100) single-crystal silicon

Geng Wang, Al F. Tasch, B. Obradovic, 1997, Advanced Lithography.

Computationally efficient ion implantation damage model: modified Kinchin-Pease model

Al F. Tasch, S. J. Morris, S. Tian, 1997, Advanced Lithography.

Experimental verification of a new physically based low-energy (<5 keV) ion implant model

Geng Wang, Al F. Tasch, B. Obradovic, 1998, Advanced Lithography.

Monte Carlo simulation of arsenic ion implantation in (100) single-crystal silicon

S. J. Morris, S. Tian, Al F. Tasch, 1996 .

A detailed physical model for ion implant induced damage in silicon

S. J. Morris, S. Tian, Charles M. Snell, 1998 .