Charles M. Snell

Low-energy model for ion implantation of arsenic and boron into (100) single-crystal silicon

Geng Wang, Al F. Tasch, B. Obradovic, 1997, Advanced Lithography.

Comparison of statistical enhancement methods for Monte Carlo semiconductor simulation

Thomas J. T. Kwan, Charles M. Snell, Carl J. Wordelman, 1998, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

Time-dependent model for vertical-cavity surface-emitting laser

Charles M. Snell, Lester E. Thode, George Csanak, 1995, Photonics West.

Delta-f and hydrodynamic methods for semiconductor transport

Charles M. Snell, D. Barnes, Robert S. Hotchkiss, 1998 .

Experimental verification of a new physically based low-energy (<5 keV) ion implant model

Geng Wang, Al F. Tasch, B. Obradovic, 1998, Advanced Lithography.

Methods of Monte Carlo electron transport in particle-in-cell codes

Thomas J. T. Kwan, Charles M. Snell, 1985 .

A detailed physical model for ion implant induced damage in silicon

S. J. Morris, S. Tian, Charles M. Snell, 1998 .