S. A. Suliman

Supplemental learning tools for statics and strength of materials

Clifford Jesse Lissenden, Roxanne Toto, Christine Masters, 2011 .

Silicon Photonics for Telecommunications and Biomedicine

S. A. Suliman, 2012 .

High-Temperature Reverse-Bias Stressing of Thin Gate Oxides in Power Transistors

Osama O. Awadelkarim, Jifa Hao, Mark Rioux, 2014 .

Growth and reliability of thick gate oxide in U-trench for power MOSFETs

S. A. Suliman, O. Awadelkarim, C.-T. Wu, 2002, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.

Modified three terminal charge pumping technique applied to vertical transistor structures

Osama O. Awadelkarim, Lucas Jay Passmore, Gary M. Dolny, 2005 .

Fowler-Nordheim and hot carrier reliabilities of U-shaped trench-gated transistors studied by three terminal charge pumping

Osama O. Awadelkarim, Lucas Jay Passmore, Gary M. Dolny, 2006 .

The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

Levent Trabzon, Osama O. Awadelkarim, Jerzy Ruzyllo, 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).

The effects of channel boron-doping on the performance and hot electron reliability of N-channel trench UMOSFETs

S. A. Suliman, O. Awadelkarim, G. Dolny, 2001 .

Comparison of AC and DC BTI in SiC Power MOSFETs

S. A. Suliman, O. Awadelkarim, J. Hao, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Gate-Oxide grown on the sidewalls and base of a U-shaped Si trench: effects of the Oxide and Oxide/Si interface condition on the properties of vertical MOS devices

S. A. Suliman, O. Awadelkarim, G. Dolny, 2004 .

Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition

S. A. Suliman, O. Awadelkarim, C.-T. Wu, 2003 .