H. Shibayama

A 5 V-only virtual ground flash cell with an auxiliary gate for high density and high speed application

Yoshimitsu Yamauchi, Kenichi Tanaka, R. Miyake, 1991, International Electron Devices Meeting 1991 [Technical Digest].

Physical mechanism of the “reverse short-channel effect” in MOS transistors

K. Suzuki, H. Shibayama, K. Suzuki, 1991 .

Formation of low defect density SiOx films for Josephson integrated circuits

Shinya Hasuo, Toyoshi Yamaoka, H. Shibayama, 1985 .