Baikui Li

Single-Phase-to-Ground Fault Location Method Based on SOGI

Baikui Li, 2018 .

Surface nitridation for improved dielectric/III‐nitride interfaces in GaN MIS‐HEMTs

Shu Yang, Cheng Liu, Kevin J. Chen, 2015 .

High-field linear magneto-resistance in topological insulator Bi2Se3 thin films

Min Xie, Hongchao Liu, Baikui Li, 2012 .

III-Nitride transistors with photonic-ohmic drain for enhanced dynamic performances

Jin Wei, Cheng Liu, Xi Tang, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Normally off Al2O3–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation

Shu Yang, Xi Tang, Kevin J. Chen, 2015, IEEE Transactions on Electron Devices.

Persistent photoconductivity and carrier transport in AlGaN∕GaN heterostructures treated by fluorine plasma

Kevin J. Chen, Weikun Ge, Baikui Li, 2008 .

Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess

Jin Wei, Cheng Liu, Xi Tang, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Characterization of VT‐instability in enhancement‐mode Al2O3‐AlGaN/GaN MIS‐HEMTs

Shu Yang, Qimeng Jiang, Baikui Li, 2013 .