Mathieu Luisier

发表

Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk

Andreas Schenk, Hamilton Carrillo-Nunez, Mathieu Luisier, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Analysis of InAs-Si heterojunction double-gate tunnel FETs with vertical tunneling paths

Andreas Schenk, Hamilton Carrillo-Nunez, Mathieu Luisier, 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

Full-band simulation of p-type ultra-scaled silicon nanowire transistors

Mathieu Luisier, Áron Szabó, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

A multi-level parallel simulation approach to electron transport in nano-scale transistors

Gerhard Klimeck, Mathieu Luisier, 2008, HiPC 2008.

Atomistic nanoelectronic device engineering with sustained performances up to 1.44 PFlop/s

Wolfgang Fichtner, Gerhard Klimeck, Mathieu Luisier, 2011, 2011 International Conference for High Performance Computing, Networking, Storage and Analysis (SC).

Optimizing the data movement in quantum transport simulations via data-centric parallel programming

Torsten Hoefler, Timo Schneider, Tal Ben-Nun, 2019, SC.

Ultra-steep-slope transistor enabled by an atomic memristive switch

Juerg Leuthold, Marco Eppenberger, Mathieu Luisier, 2020, NanoScience + Engineering.

Computational nanoelectronics research and education at nanoHUB.org

Dragica Vasileska, Gerhard Klimeck, Mathieu Luisier, 2009 .

A Parallel Sparse Linear Solver for Nearest-Neighbor Tight-Binding Problems

Andreas Schenk, Wolfgang Fichtner, Gerhard Klimeck, 2008, Euro-Par.

Pushing back the limit of ab-initio quantum transport simulations on hybrid supercomputers

Joost VandeVondele, Mathieu Luisier, Mauro Calderara, 2015, SC15: International Conference for High Performance Computing, Networking, Storage and Analysis.

Nanoelectronic Modeling using NEMO 3-D and OMEN and their Deployment on nanoHUB.org

Muhammad Usman, Gerhard Klimeck, Hoon Ryu, 2008 .

Countdown Slack: A Run-Time Library to Reduce Energy Footprint in Large-Scale MPI Applications

Luca Benini, Andrea Borghesi, Daniele Cesarini, 2019, IEEE Transactions on Parallel and Distributed Systems.

Numerical strategies towards peta-scale simulations of nanoelectronics devices

Gerhard Klimeck, Mathieu Luisier, M. Luisier, 2010, Parallel Comput..

Efficient algorithms for large-scale quantum transport calculations.

Joost VandeVondele, Mohammad Hossein Bani-Hashemian, Mathieu Luisier, 2017, The Journal of chemical physics.

Simulation and design of optical gain in In(Al)GaN/GaN short wavelength lasers

Mathieu Luisier, Ulrich T. Schwarz, Bernd Witzigmann, 2006, SPIE Photonics Europe.

A multi-level parallel simulation approach to electron transport in nano-scale transistors

Gerhard Klimeck, Mathieu Luisier, M. Luisier, 2008, 2008 SC - International Conference for High Performance Computing, Networking, Storage and Analysis.

Multidimensional noise model and simulation of VCSEL devices

Mathieu Luisier, Bernd Witzigmann, Matthias Streiff, 2005, SPIE OPTO.

Performance study of strained III–V materials for ultra-thin body transistor applications

Andreas Schenk, Luca Selmi, Antonio Gnudi, 2016, 2016 46th European Solid-State Device Research Conference (ESSDERC).

A data-centric approach to extreme-scale ab initio dissipative quantum transport simulations

Torsten Hoefler, Timo Schneider, Tal Ben-Nun, 2019, SC.

Effect of surface roughness and phonon scattering on extremely narrow InAs-Si Nanowire TFETs

Andreas Schenk, Hamilton Carrillo-Nunez, Mathieu Luisier, 2016, 2016 46th European Solid-State Device Research Conference (ESSDERC).

Opto-electronic memristors: Prospects and challenges in neuromorphic computing

Juerg Leuthold, Ueli Koch, Mathieu Luisier, 2020 .

A Nano-electronics Simulator for Petascale Computing: From NEMO to OMEN

Gerhard Klimeck, Faisal Saied, Hansang Bae, 2008 .

Rapid Parallel Systems Deployment: Techniques for Overnight Clustering

Mathieu Luisier, Michael Shuey, Randy Herban, 2008, LISA.

Corrections to “On the Ballistic Injection Velocity in Deeply Scaled MOSFETs” [Aug 09 1674-1680]

Yang Liu, Dimitri A. Antoniadis, Mathieu Luisier, 2012 .

Fast Methods for Computing Selected Elements of the Green's Function in Massively Parallel Nanoelectronic Device Simulations

Olaf Schenk, Mathieu Luisier, Andrey Kuzmin, 2013, Euro-Par.

Effect of Electron-phonon Scattering on the Thermal Conductivity of Si Nanowires

Andreas Schenk, Mathieu Luisier, Kantawong Vuttivorakulchai, 2018, 2018 48th European Solid-State Device Research Conference (ESSDERC).

A Parallel Implementation of Electron-Phonon Scattering in Nanoelectronic Devices up to 95k Cores

Mathieu Luisier, M. Luisier, 2010, 2010 ACM/IEEE International Conference for High Performance Computing, Networking, Storage and Analysis.

Atomistic simulation of electron and phonon transport in nano-devices

Mathieu Luisier, Reto Rhyner, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Nanowire Simulations from atomistic tool development to deployed tools on nanoHUB.org

Gerhard Klimeck, Mathieu Luisier, Neophytos Neophytou, 2008 .

ジャンクションレストランジスタにおけるNEGF法を用いたデバイスシミュレーション : 不純物散乱と遮蔽の影響の考察(プロセス・デバイス・回路シュミレーション及び一般)

Mathieu Luisier, 佐野伸行, 植田暁子, 2013, SDM 2013.

Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO and OMEN

Gerhard Klimeck, Mathieu Luisier, M. Luisier, 2010, Computing in Science & Engineering.

Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems

Christophe Caillaud, Hervé Bertin, Cristell Maneux, 2021, Applied Sciences.

Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT

Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, 2010 .

Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires

Gerhard Klimeck, Mathieu Luisier, M. Luisier, 2010, 1009.6188.

Lithiation of tin oxide: a computational study.

Mathieu Luisier, Andreas Pedersen, M. Luisier, 2014, ACS applied materials & interfaces.

Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures

Gerhard Klimeck, Mathieu Luisier, M. Luisier, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Charge Transport in Semiconductors Assembled from Nanocrystals

Mohammad Hossein Bani-Hashemian, Mathieu Luisier, Vanessa Wood, 2019, 1909.09739.

An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices

Adrian M. Ionescu, Luca Selmi, Heike Riel, 2013 .

Modeling the thermal conductivity of Si nanowires with surface roughness

Mathieu Luisier, Andreas Schenk, Kantawong Vuttivorakulchai, 2016, 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Atomistic treatment of interface roughness in Si nanowire transistors with different channel orientations

Wolfgang Fichtner, Mathieu Luisier, Andreas Schenk, 2007 .

Microscopic analysis of optical gain in InGaN/GaN quantum wells

Werner Wegscheider, Alfred Lell, Mathieu Luisier, 2006 .

Atomic Scale Photodetection Enabled by a Memristive Junction.

Juerg Leuthold, Arne Josten, Yannick Salamin, 2018, ACS nano.

Efficient Two-Band based Non-Equilibrium Green's Function Scheme for Modeling Tunneling Nano-Devices

Asen Asenov, Vihar P. Georgiev, Mathieu Luisier, 2018, 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk

Mathieu Luisier, Andreas Schenk, Hamilton Carrillo-Nunez, 2015 .

Charge Trapping Mechanism Leading to Sub-60-mV/decade-Swing FETs

Gerhard Tröster, Luisa Petti, Niko Münzenrieder, 2017, IEEE Transactions on Electron Devices.

On the Validity of the Top of the Barrier Quantum Transport Model for Ballistic Nanowire MOSFETs

Gerhard Klimeck, Mathieu Luisier, M. Luisier, 2009, 2009 13th International Workshop on Computational Electronics.

Ultimate device scaling: Intrinsic performance comparisons of carbon-based, InGaAs, and Si field-effect transistors for 5 nm gate length

Jeffrey Bokor, Dimitri A. Antoniadis, Mathieu Luisier, 2011, 2011 International Electron Devices Meeting.

One-dimensional edge contacts to a monolayer semiconductor.

Lukas Novotny, Takashi Taniguchi, Kenji Watanabe, 2019, Nano letters.

Bandstructure calculation using the k∙p method for arbitrary potentials with open boundary conditions

Mathieu Luisier, Bernd Witzigmann, Stefan Odermatt, 2005 .

Leakage-Reduction Design Concepts for Low-Power Vertical Tunneling Field-Effect Transistors

Gerhard Klimeck, Mathieu Luisier, Samarth Agarwal, 2010, IEEE Electron Device Letters.

Ab Initio Simulation of Band-to-Band Tunneling FETs With Single- and Few-Layer 2-D Materials as Channels

Mathieu Luisier, Nicola Marzari, Davide Campi, 2018, IEEE Transactions on Electron Devices.

Atomic Scale Plasmonic Switch.

Juerg Leuthold, Christian Haffner, Mathieu Luisier, 2016, Nano letters.

Ab initiosimulation of single- and few-layerMoS2transistors: Effect of electron-phonon scattering

Mathieu Luisier, Reto Rhyner, Aron Szabo, 2015 .

Full Band Atomistic Modeling of Homo-junction InGaAs Band-to-Band Tunneling Diodes Including Band Gap Narrowing

Suman Datta, Gerhard Klimeck, Mathieu Luisier, 2012 .

Full-Band Atomistic Study of Source-To-Drain Tunneling in Si Nanowire Transistors

Wolfgang Fichtner, Mathieu Luisier, Andreas Schenk, 2007 .

Atomistic Simulation of Transport Phenomena in Nanoelectronic Devices

Mathieu Luisier, 2014 .

Phonon-limited and effective low-field mobility in n- and p-type [100]-, [110]-, and [111]-oriented Si nanowire transistors

Mathieu Luisier, M. Luisier, 2011 .

Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

Mathieu Luisier, Andreas Schenk, Hamilton Carrillo-Nunez, 2015 .

A generalized Poisson solver for first-principles device simulations.

Joost VandeVondele, Mohammad Hossein Bani-Hashemian, Mathieu Luisier, 2016, The Journal of chemical physics.

Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects.

Heike Riel, Siegfried Karg, Mathieu Luisier, 2017, Nano letters.

Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials

Mathieu Luisier, M. Luisier, Á. Szabó, 2017, 1812.01970.

Full-band quantum transport in nanowire transistors

Mathieu Luisier, M. Luisier, 2008 .

Random Dopant-Induced Variability in Si-InAs Nanowire Tunnel FETs: A Quantum Transport Simulation Study

Asen Asenov, Vihar P. Georgiev, Fikru Adamu-Lema, 2018, IEEE Electron Device Letters.

Microcanonical RT-TDDFT simulations of realistically extended devices.

Joost VandeVondele, Mohammad Hossein Bani-Hashemian, Mathieu Luisier, 2018, The Journal of chemical physics.

Electronic structure and transmission characteristics of SiGe nanowires

Gerhard Klimeck, Mathieu Luisier, Timothy B. Boykin, 2008 .

Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parametrization

Gerhard Klimeck, Mathieu Luisier, Timothy B. Boykin, 2010 .

Phonon-limited performance of single-layer, single-gate black phosphorus n- and p-type field-effect transistors

Mathieu Luisier, Hamilton Carrillo-Nunez, Reto Rhyner, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Thermal transport and Matthiessen's rule in ultra-scaled Si nanowires

Mathieu Luisier, M. Luisier, 2013 .

Positive charge trapping phenomenon in n-channel thin-film transistors with amorphous alumina gate insulators

Gerhard Tröster, Luisa Petti, Niko Münzenrieder, 2016 .

Analysis of Si, InAs, and Si-InAs tunnel diodes and tunnel FETs using different transport models

Mathieu Luisier, Andreas Schenk, Reto Rhyner, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

Length Scale of Diffusive Phonon Transport in Suspended Thin Silicon Nanowires.

Dimos Poulikakos, Mathieu Luisier, Reto Rhyner, 2017, Nano letters.

Comprehensive Simulation of Vertical Cavity Surface Emitting Lasers: Inclusion of a Many-Body Gain Model

Valerio Laino, Andreas Witzig, Mathieu Luisier, 2005 .

Influence of anharmonic phonon decay on self-heating in Si nanowire transistors

Mathieu Luisier, Reto Rhyner, M. Luisier, 2014 .

Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching

Juerg Leuthold, Yuriy Fedoryshyn, Yannick Salamin, 2019, Communications Physics.