B. Sell

2 MB Array-Level Demonstration of STT-MRAM Process and Performance Towards L4 Cache Applications

C. Wiegand, O. Golonzka, U. Arslan, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

22FFL: A high performance and ultra low power FinFET technology for mobile and RF applications

S. Mudanai, K. Phoa, P. Bai, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Implementation of High Power RF Devices with Hybrid Workfunction and OxideThickness in 22nm Low-Power FinFET Technology

M. Armstrong, B. Sell, M. Armstrong, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Intel 22nm FinFET (22FFL) Process Technology for RF and mm Wave Applications and Circuit Design Optimization for FinFET Technology

K. Phoa, B. Sell, S. Ravikumar, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

A fully integrated Al2O3 trench capacitor DRAM for sub-100 nm technology

H. Reisinger, M. Kerber, S. Jakschik, 2002, Digest. International Electron Devices Meeting,.