Ken Goto

Recent Advances in Ga2O3 MOSFET Technologies

Takeshi Ohshima, Chia-Hung Lin, Masataka Higashiwaki, 2018, 2018 76th Device Research Conference (DRC).

Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy

Akito Kuramata, Shigenobu Yamakoshi, Yoshinao Kumagai, 2014 .

Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties

Akito Kuramata, Masataka Higashiwaki, Keita Konishi, 2018, Thin Solid Films.

1-kV vertical Ga2O3 field-plated Schottky barrier diodes

Akito Kuramata, Masataka Higashiwaki, Keita Konishi, 2017 .

Current Aperture Vertical $\beta$ -Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping

Masataka Higashiwaki, Yoshinao Kumagai, Hisashi Murakami, 2019, IEEE Electron Device Letters.