Jürgen Bläsing

发表

Influence of anisotropic strain on excitonic transitions in a-plane GaN films

Christoph Werner, Norbert Esser, Armin Dadgar, 2009, Microelectron. J..

Thin film growth of ZnO and its relation to substrate properties

Juergen Christen, Joachim Sann, Bruno K. Meyer, 2007, SPIE OPTO.

High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

E. Kohn, Armin Dadgar, A. Diez, 2004 .

MOVPE growth of GaN on Si(1 1 1) substrates

E. Kohn, Fernando Ponce, Jürgen Christen, 2003 .

Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

Michael Heuken, A. Alam, Armin Dadgar, 2000 .

Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range

Jürgen Christen, Armin Dadgar, Thomas Hempel, 2007 .

Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy

Patrick Rode, Armin Dadgar, Peter Stauss, 2012 .

Efficient stress relief in GaN heteroepitaxy on Si(1 1 1) using low-temperature AlN interlayers

Armin Dadgar, A. Diez, Alois Krost, 2003 .

Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon

Peter Veit, Mathias Schubert, Dieter Bimberg, 2003 .

Metalorganic vapor phase epitaxy grown InGaN∕GaN light-emitting diodes on Si(001) substrate

Armin Dadgar, A. Diez, Alois Krost, 2006 .

Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking

Armin Dadgar, A. Diez, Alois Krost, 2002 .

The influence of argon pressure on the structure of sputtered molybdenum: From porous amorphous to a new type of highly textured film

M. Löhmann, Jürgen Bläsing, J. Bläsing, 1996 .

Growth of AlInN/AlGaN distributed Bragg reflectors for high quality microcavities

A. Franke, Jürgen Christen, Rüdiger Goldhahn, 2012 .

In-situ growth monitoring of AlInN/AlGaN distributed Bragg reflectors for the UV-spectral range

Armin Dadgar, Alois Krost, Jürgen Bläsing, 2013 .

MOVPE growth of GaN on Si - : Substrates and strain

Peter Veit, Jürgen Christen, Armin Dadgar, 2007 .

Improving GaN-on-silicon properties for GaN device epitaxy

Jürgen Christen, Armin Dadgar, Thomas Hempel, 2011 .

Growth and coalescence behavior of semipolar $(11{\bar {2}}2)$ GaN on pre‐structured r‐plane sapphire substrates

Sebastian Metzner, Josef Zweck, Thomas Wunderer, 2011 .

(001)-Textured Cu2S Thin Films Deposited by RF Reactive Sputtering

Yunbin He, Alois Krost, Jürgen Bläsing, 2002 .

Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer

D. Bimberg, V. Türck, Juergen Christen, 1999 .

Structural investigation of GaN layers grown on Si(1 1 1) substrates using a nitridated AlAs buffer layer

Peter Veit, D. Bimberg, André Strittmatter, 2000 .

Crack-Free, Highly Conducting GaN Layers on Si Substrates by Ge Doping

Armin Dadgar, A. Diez, Alois Krost, 2011 .

The origin of stress reduction by low-temperature AlN interlayers

Armin Dadgar, A. Diez, Alois Krost, 2002 .