E. Hackbarth

Junction degradation in bipolar transistors and the reliability imposed constraints to scaling and design

Denny D. Tang, E. Hackbarth, D. Tang, 1988 .

Methodology for bipolar process diagnosis and its application to advanced self-aligned bipolar transistors

E. Hackbarth, G.P. Li, Ching-Te Chuang, 1987, IEEE Transactions on Electron Devices.

A 1.0-ns 5-kbit ECL RAM

G. P. Li, E. Hackbarth, D. D. Tang, 1986 .

On the punchthrough characteristics of advanced self-aligned bipolar transistors

E. Hackbarth, G.P. Li, C.T. Chuang, 1987, IEEE Transactions on Electron Devices.

Inherent and stress-induced leakage in heavily doped silicon junctions

E. Hackbarth, D. Tang, E. Hackbarth, 1988 .

Design considerations of high-performance narrow-emitter bipolar transistors

J.M.C. Stork, Ching-Te Chuang, E. Hackbarth, 1987, IEEE Electron Device Letters.

Identification and implication of a perimeter tunneling current component in advanced self-aligned bipolar transistors

E. Hackbarth, T.-C. Chen, G. P. Li, 1988 .

On the very-high-current degradations on Si n-p-n transistors

E. Hackbarth, T.-C. Chen, D. Tang, 1990 .