I. Saraf

High performance 14nm SOI FinFET CMOS technology with 0.0174µm2 embedded DRAM and 15 levels of Cu metallization

G. Northrop, V. Sardesai, S. Narasimha, 2014, 2014 IEEE International Electron Devices Meeting.

Mushroom-Type phase change memory with projection liner: An array-level demonstration of conductance drift and noise mitigation

S. Ambrogio, A. Sebastian, T. Yamashita, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).