Soshi Sato

Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2011, Microelectron. Reliab..

Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor

Tetsuo Endoh, Masaaki Niwa, Soshi Sato, 2016, Microelectron. Reliab..

Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

Hiroshi Iwai, Kenji Ohmori, Kuniyuki Kakushima, 2011, Microelectron. Reliab..

Extraction of additional interfacial states of silicon nanowire field-effect transistors

Wei Li, Hiroshi Iwai, Kenji Natori, 2011 .

Electrical characterization of Si nanowire field-effect transistors with semi gate-around structure suitable for integration

Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, 2010 .

Gate semi-around Si nanowire FET fabricated by conventional CMOS process with very high drivability

Hiroshi Iwai, Kenji Natori, Kuniyuki Kakushima, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Advantages of Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties

Hiroshi Iwai, Kuniyuki Kakushima, Soshi Sato, 2012 .

Annealing Reaction for Ni Silicidation of Si Nanowire

Hiroshi Iwai, Nobuyuki Sugii, Kenji Natori, 2009 .

High-performance Si Nanowire FET with a semi gate-around structure suitable for integration

Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, 2009, 2009 Proceedings of the European Solid State Device Research Conference.