Y. F. Yang

发表

Recent advances in rock tunnelling in China (Keynote address)

Cf Lee, Sj Wang, Y. F. Yang, 1996 .

Carbon doped GaInP/GaAs double heterostructure-emitter bipolar transistors with high current gain

Y. F. Yang, E. Yang, C. Hsu, 1995 .

Fabrication and characteristics of a GaInP/GaAs heterojunction bipolar transistor using a selective buried sub-collector

E. S. Yang, Y. F. Yang, C. Hsu, 1997 .

Modeling of current gain's temperature dependence in heterostructure-emitter bipolar transistors

Y. F. Yang, C. Hsu, E. Yang, 2000 .

High frequency GaInP/GaAs heterostructure-emitter bipolar transistor with low offset voltage

Y. F. Yang, E. Yang, C. Hsu, 1997 .

Comparison of GaInP/GaAs heterostructure-emitter bipolar transistors and heterojunction bipolar transistors

Y. F. Yang, E. Yang, Y. Chen, 1995 .

Prevention of base dopant out-diffusion using a heterostructure-emitter in GaInP/GaAs heterojunction bipolar transistors

Y. F. Yang, C. Hsu, E. Yang, 1995 .

Quasiballistic electron transport in InP/InGaAs heterojunction bipolar transistors

Y. F. Yang, M. Hopkinson, P. Houston, 1992 .

Integration of GaInP/GaAs Heterojunction Bipolar Transistors and High Electron Mobility Transistors-IEEE Electron Device Letters

Y. F. Yang, C. Hsu, S., 2004 .

Temperature dependence of current gain of GaInP/GaAs heterojunction and heterostructure-emitter bipolar transistors

Y. F. Yang, C. Hsu, E. Yang, 1999 .

High frequency and low noise C-doped GaInP/GaAs heterojunction bipolar transistor grown by MOCVD using TBA and TBP

Y. F. Yang, E. Yang, Chun-Wei Hsu, 1996 .

Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors

Y. F. Yang, E. Yang, C. Hsu, 1994 .

High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management

Y. F. Yang, C. Hsu, E. Yang, 2003 .

InGaP/GaAs power heterostructure-emitter bipolar transistor

Y. F. Yang, C. Hsu, E. Yang, 2001 .

Thermal effect on current gains of an AlGaAs/GaAs heterostructure-emitter bipolar transistor

Y. F. Yang, E. Yang, H. Lo, 1999 .

Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas

Y. F. Yang, C. Hsu, E. Yang, 1997 .

CCl4‐doped semi‐insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors

Y. F. Yang, C. Hsu, E. Yang, 1996 .

Improvement of SiGe oxide grown by electron cyclotron resonance using H2O vapor annealing

Y. F. Yang, E. Yang, D. Tchikatilov, 1996 .