Jin-Aun Ng

Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2006, IEICE Electron. Express.

Mobility Degradation Analysis for La2O3 nMISFET

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2006 .

Trapping characteristics of lanthanum oxide gate dielectric film explored from temperature dependent current-voltage and capacitance-voltage measurements

Hiroshi Iwai, Kuniyuki Kakushima, Chandan Kumar Sarkar, 2007 .

Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2005 .