A. Axmann

Characterization of picosecond GaAs metal-semiconductor-metal photodetectors

Juergen Kuhl, Josef Rosenzweig, C. Moglestue, 1991, Other Conferences.

1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon

A. Axmann, H. Ennen, A. Axmann, 1983 .

1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy

A. Axmann, W. Haydl, H. Ennen, 1985 .

10 Gbit/s Monolithic Integrated Optoelectronic Receiver using an MSM Photodiode and AlGaAs/GaAs HEMTs

M. Berroth, M. Ludwig, J. Rosenzweig, 1991, ESSDERC '91: 21st European Solid State Device Research Conference.

Picosecond pulse response characteristics of GaAs metal‐semiconductor‐metal photodetectors

J. Rosenzweig, C. Moglestue, Axel Hulsmann, 1991 .