K. B. Lee

发表

The 2018 GaN power electronics roadmap

Alex Q. Huang, Yuhao Zhang, Xu Li, 2018, Journal of Physics D: Applied Physics.

Abstract—All-GaN integrated cascode heterojunction field effect transistors were designed and fabricated for power switching applications. A threshold voltage of +2 V was achieved using a fluorine treatment and a metal-insulator-semiconductor gate structure on the enhancement mode part. The cascode

K. B. Lee, Z. Zaidi, 2017 .

Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant

Sheng Jiang, Peter A. Houston, Ivor Guiney, 2015, Semiconductor Science and Technology.

The 310–340 nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer

A. G. Cullis, K. B. Lee, M. Dawson, 2008 .

A study of dislocations in AlN and GaN films grown on sapphire substrates

A. G. Cullis, Peter J. Parbrook, Jie Bai, 2005 .

Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

Sung-Jin Cho, Paul R. Chalker, Iain G. Thayne, 2016 .

Bi-layer SixNy passivation on AlGaN/GaN HEMTs to suppress current collapse and improve breakdown

Peter A. Houston, Michael J. Uren, David J. Wallis, 2010 .

Lateral charge spreading and device-to-device coupling in C-doped AlGaN/GaN-on-Si wafers

K. B. Lee, M. Uren, M. Kuball, 2019, Microelectronics Reliability.

Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer

A. G. Cullis, Peter J. Parbrook, Jie Bai, 2007 .

The origin of the high ideality factor in AlGaN‐based quantum well ultraviolet light emitting diodes

Tao Wang, Peter J. Parbrook, Jie Bai, 2010 .

Optical investigation of exciton localization in AlxGa1−xN

K. B. Lee, T. Martin, D. Wallis, 2007 .

Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

J. S. Cheong, K. B. Lee, D. Wallis, 2018 .

Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects

K. B. Lee, P. Houston, Sheng Jiang, 2020, Journal of Physics D: Applied Physics.

Band alignments of sputtered dielectrics on GaN

K. B. Lee, V. Dhanak, I. Mitrovic, 2019, Journal of Physics D: Applied Physics.

Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs

K. B. Lee, M. Uren, D. Wallis, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

K. B. Lee, S. Tripathy, R. Potter, 2019, Journal of Applied Physics.

Elimination of Leakage in GaN-on-Diamond

K. B. Lee, D. Twitchen, P. Houston, 2016, 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Elimination of leakage in GaNon-diamond

K. B. Lee, D. Twitchen, P. Houston, 2016 .

Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth

C. T. Foxon, K. B. Lee, D. Wallis, 2017 .

Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes

K. B. Lee, R. Airey, G. Hill, 2009 .

Greatly improved performance of 340nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer

A. G. Cullis, K. B. Lee, R. Airey, 2006 .

Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers

K. B. Lee, C. Humphreys, R. Oliver, 2018, Journal of Applied Physics.

Temperature dependent behaviour of 340 nm light emitting diodes incorporating a gallium nitride interlayer

K. B. Lee, R. Airey, G. Hill, 2008 .

Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

K. B. Lee, D. Wallis, C. Humphreys, 2018 .

Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V

K. B. Lee, M. Uren, D. Wallis, 2015 .

New electrode-barrier structures for high density ferroelectric memories

Seshu B. Desu, K. B. Lee, R. Vedula, 2001 .

Characterization of p-GaN1−xAsx/n-GaN PN junction diodes

C. T. Foxon, K. B. Lee, D. Wallis, 2016 .

Raman Scattering and PL Studies on AlGaN/GaN HEMT Layers on 200 mm Si(111)

K. B. Lee, G. Lo, S. Todd, 2012 .

Tripathy Raman Scattering and PL Studies on AlGaN / GaN HEMT Layers on 200 mm Si ( 111 ) A

K. B. Lee, S. Tripathy, S. L. Selvaraj, 2012 .

Non‐polar AlN and GaN/AlN on r‐plane sapphire

A. G. Cullis, K. B. Lee, Tao Wang, 2009 .

Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe

K. B. Lee, T. Martin, M. Uren, 2010 .

Generation of misfit dislocations in highly mismatched GaN/AlN layers

A. G. Cullis, K. B. Lee, Tao Wang, 2008 .

Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors

K. B. Lee, D. Wallis, C. Humphreys, 2014 .

InGaN/GaN quantum wells with low growth temperature GaN cap layers

K. B. Lee, P. Parbrook, D. Mowbray, 2007 .