J.-C. de Jaeger

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs

Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, 2009, Microelectron. Reliab..

2D-Hydrodynamic Energy Model Including Avalanche Breakdown Phenomenon for Power Field Effect Transistors

Michel Rousseau, J.-C. de Jaeger, 2001, VLSI Design.

Physical study of the dissipated power area in high electron mobility transistors for thermal modelling

Michel Rousseau, J.-C. de Jaeger, Brahim Benbakhti, 2007, Microelectron. J..

Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress

Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, 2016, Microelectron. Reliab..