Christian Dua

发表

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs

Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, 2009, Microelectron. Reliab..

Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences

Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications

Christian Dua, Sylvain L. Delage, A. Sozza, 2005, Microelectron. Reliab..

Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology

Jae-Woo Park, Dimitris Pavlidis, Christian Dua, 2000 .

Wide band gap semiconductor reliability : Status and trends

Christian Dua, Sylvain L. Delage, S. Delage, 2003, Microelectron. Reliab..

Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate

Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, 2013, Microelectron. Reliab..

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements

Nathalie Labat, Nathalie Malbert, André Touboul, 2006, Microelectron. Reliab..

Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes

Christian Dua, Mourad Oualli, Sylvain L. Delage, 2018, Microelectron. Reliab..

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, 2014, Microelectron. Reliab..

Reliability Investigation of Gallium Nitride HEMT

V. Hoel, Christian Dua, Joachim Würfl, 2004, Microelectron. Reliab..

Long-term reliability of Ti-Pt-Au metallization system for Schottky contact and first-level metallization on SiC MESFET

Enrico Zanoni, Christian Dua, A. Kerlain, 2004, Microelectron. Reliab..

InAlN/GaN HEMTs based L-band high-power packaged amplifiers

Sylvain Delage, Christian Dua, Jean-Claude Jacquet, 2014, International Journal of Microwave and Wireless Technologies.

Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs

Gaudenzio Meneghesso, Nathalie Labat, André Touboul, 2007, Microelectron. Reliab..

Development of SiC Devices for Microwave and RF Power Amplifiers

Christian Brylinski, Christian Dua, Alexandre Kerlain, 2004 .

Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs

Christian Dua, Mourad Oualli, Dominique Carisetti, 2009, Microelectron. Reliab..

SiC Microwave Power Devices

Christian Brylinski, Christian Dua, O. Noblanc, 2001 .

Conductance deep-level transient spectroscopy study of 1 μm gate length 4H-SiC MESFETs

Christian Brylinski, Christian Dua, Hassen Maaref, 2006 .

Deep levels investigation of AlGaN/GaN heterostructure transistors

Christian Dua, W. Chikhaoui, R. Aubry, 2009 .

Power Density Comparison between Microwave Power MESFET's Processed on Conductive and Semi-Insulating Wafer

Eric Chartier, Christian Brylinski, Christian Dua, 2000 .

Temperature measurement in AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy

Sylvain Delage, Christian Dua, B. Dessertenne, 2005 .

Trap-free process and thermal limitations on large-periphery SiC MESFET for RF and microwave power

Christian Brylinski, Christian Dua, Farid Temcamani, 2003 .

Testing the Temperature Limits of GaN-Based HEMT Devices

Christian Dua, Nicolas Grandjean, David Maier, 2010, IEEE Transactions on Device and Materials Reliability.

Thermal stability of Mo-based Schottky contact for AlGaN/GaN HEMT

Enrico Zanoni, Sylvain Delage, Christian Dua, 2005 .

Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

Christian Dua, Ali Soltani, J. Laureyns, 2007 .