Herman Maes

Willy Sansen, S. Decoutere, Herman Maes, 2001, ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153).

ESD protection methodology for deep-sub-micron CMOS

Guido Groeseneken, Karlheinz Bock, Herman Maes, 1998 .

Trends in microelectronics, optical detectors, and biosensors

Andrew Campitelli, C. Van Hoof, Herman Maes, 2001 .

Basics and applications of charge pumping in submicron MOSFET's

Guido Groeseneken, Herman Maes, 1997, 1997 21st International Conference on Microelectronics. Proceedings.

Analysis of mechanisms for the enhanced degradation during AC hot carrier stress of MOSFETs

Guido Groeseneken, P. Heremans, Herman Maes, 1988, Technical Digest., International Electron Devices Meeting.

Silicon scaling and its consequences for memory technology

Herman Maes, Jan Van Houdt, J. V. Houdt, 2003 .

Explosive crystallization of amorphous Si3N4 films on silicon during silicon laser melting

Geert Willems, Dirk Wouters, Herman Maes, 1993 .

Origin of substrate hole current after gate oxide breakdown

Guido Groeseneken, Robin Degraeve, Ingrid De Wolf, 2002 .

Round robin investigation of silicon oxide on silicon reference materials for ellipsometry

J. Van Landuyt, Herman Maes, J. C. G. de Sande, 1993 .

High-temperature hydrogen anneal of mnos structures

Herman Maes, Gilbert Declerck, R. Van Overstraeten, 1978 .

SiGe HBT for application in BiCMOS technology : II. Design, technology and performance

Magnus Willander, Stefaan Decoutere, Herman Maes, 2001 .

Influence of the Pt electrode on the properties of sol-gel PZT-films

Geert Willems, Dirk Wouters, Herman Maes, 1995 .

Investigation and Comparison of the Noise in the Gate and Substrate Current after Soft-Breakdown

Guido Groeseneken, Felice Crupi, Tanya Nigam, 1999 .

Influence of a high‐temperature hydrogen anneal on the memory characteristics of p‐channel MNOS transistors

Herman Maes, H. Maes, Guido L. Heyns, 1980 .

Analysis of HBM ESD testers and specifications using a fourth-order lumped element model

Guido Groeseneken, Christian Russ, Herman Maes, 1994 .

Stresses and strains in lattice‐mismatched stripes, quantum wires, quantum dots, and substrates in Si technology

I. De Wolf, Herman Maes, S. C. Jain, 1996 .

A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides

Guido Groeseneken, Robin Degraeve, Herman Maes, 1995, Proceedings of International Electron Devices Meeting.

Hot-carrier degradation behavior of N- and P-channel MOSFET's under dynamic operation conditions

Guido Groeseneken, P. Heremans, Herman Maes, 1994 .

Hot carrier degradation and time-dependent dielectric breakdown in oxides

Guido Groeseneken, Tanya Nigam, Robin Degraeve, 1999 .

Double Snapback in SO1 nMOSFET's and its Application for SO1 ESD Protection

Jean-Pierre Colinge, Herman Maes, G. Groeseneken, 1993 .

The influence of the measurement setup on enhanced AC hot carrier degradation of MOSFETs

Guido Groeseneken, Paul Heremans, Herman Maes, 1990 .

Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors

Guido Groeseneken, P. Heremans, Herman Maes, 1991 .

Single poly cell as the best choice for radiation-hard floating gate EEPROM technology

Guido Groeseneken, Dirk Wellekens, J. Van Houdt, 1993 .

Temperature dependence of the channel hot-carrier degradation of n-channel MOSFET's

Guido Groeseneken, P. Heremans, Herman Maes, 1990 .

Impact of weak Fermi-level pinning on the correct interpretation of III-V MOS C-V and G-V characteristics

Guido Groeseneken, Gustaaf Borghs, Herman Maes, 2007 .

A new analytic model for the description of the intrinsic oxide breakdown statistics of ultra-thin oxides

Guido Groeseneken, Herman Maes, G. Groeseneken, 1996 .

A simple, cost effective and very sensitive alternative for photon emission spectroscopy

Guido Groeseneken, Ingrid De Wolf, Herman Maes, 1997 .

1/f noise in thin oxide p‐channel metal–nitride–oxide–silicon transistors

Herman Maes, Sabir H. Usmani, 1983 .

An inelastic quantum tunnelling model for current conduction after soft-breakdown

Guido Groeseneken, Felice Crupi, Tanya Nigam, 1998 .

Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers

Geert Willems, Michael Campbell, Cor Claeys, 1993 .

A method to interpret micro-Raman experiments made to measure nonuniform stresses: Application to local oxidation of silicon structures

Magnus Willander, Herman Maes, R. Van Overstraeten, 1998 .

Analysis of the enhanced hot-electron injection in split-gate transistors useful for EEPROM applications

Guido Groeseneken, Ludo Deferm, J. Van Houdt, 1992 .

Charge trapping in SiO 2 /HfO 2 gate dielectrics: comparison between charge-pumping and pulsed I D -V G

Guido Groeseneken, Luigi Pantisano, Robin Degraeve, 2004 .

Process‐induced mechanical stress in isolation structures studied by micro‐Raman spectroscopy

I. De Wolf, Herman Maes, H. Maes, 1993 .

Understanding of the Hot-Carrier Degradation in Submicron MOSFET's : From Uniform Injection towards the Real Operating Conditions

Guido Groeseneken, Herman Maes, R. Bellens, 1994 .

Correlation between 1/f noise and interface state density at the Fermi level in field‐effect transistors

Guido Groeseneken, Herman Maes, G. Groeseneken, 1985 .

Performance and reliability aspects of FOND: a new deep submicron CMOS device concept

P. Habas, Guido Groeseneken, Ludo Deferm, 1996 .

Interface Trap Characterization and Fermi Level Pinning in Si-Passivated Ge/HfO2 Capacitors

Philippe Roussel, Guido Groeseneken, Ben Kaczer, 2006 .

Interface characterization of Si-passivated HfO2 germanium capacitors using DLTS measurements

Eddy Simoen, Guido Groeseneken, Herman Maes, 2006 .

Determining weak Fermi-level pinning in MOS devices by conductance and capacitance analysis and application to GaAs MOS devices

Guido Groeseneken, Gustaaf Borghs, Herman Maes, 2007 .

On the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown

Guido Groeseneken, Robin Degraeve, Herman Maes, 1996, Proceedings of International Reliability Physics Symposium.

On the hot-carrier-induced post-stress interface trap generation in n-channel MOS transistors

Guido Groeseneken, Paul Heremans, Herman Maes, 1994 .

Charge storage in the nitride layer of MNOS structures

Herman Maes, R. Van Overstraeten, 1974 .

Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment

Ingrid De Wolf, Herman Maes, H. Maes, 1996 .

On the breakdown statistics and mechanisms in ultra-thin oxides and nitrided oxides

Guido Groeseneken, Robin Degraeve, Herman Maes, 1997 .

Critical analysis of the substrate hot-hole injection technique

Geert Van den bosch, Guido Groeseneken, Herman Maes, 1994 .

Assessment of oxide reliability and hot carrier degradation in CMOS technology

Guido Groeseneken, Robin Degraeve, Herman Maes, 1998 .

Characterization of front and back Si-SiO/sub 2/ interfaces in thick- and thin-film silicon-on-insulator MOS structures by the charge-pumping technique

Guido Groeseneken, C. Claeys, Dirk Wouters, 1989 .

Observation of single interface traps in submicron MOSFET's by charge pumping

Guido Groeseneken, I. De Wolf, Herman Maes, 1996 .

Channel hot electron injection versus Fowler-Nordheim tunneling for multilevel charge storage in non-volatile memories

Guido Groeseneken, Dirk Wellekens, Paul Hendrickx, 1997 .

Low-field tunnelling current in thin-oxide m.n.o.s. memory transistors

Herman Maes, R. Van Overstraeten, 1973 .

Geometry Dependence of 1/f Noise in n‐ and p‐channel MuGFETs

Willy Sansen, S. Decoutere, Guido Groeseneken, 2005 .

Preisach model for the simulation of ferroelectric capacitors

Dirk Wouters, Rainer Waser, Herman Maes, 2001 .

Stresses and strains in epilayers, stripes and quantum structures of III - V compound semiconductors

Magnus Willander, Herman Maes, H. Maes, 1996 .

Dielectric quality and reliability of FUSI/HfSiON devices with process induced strain

Eddy Simoen, Guido Groeseneken, Ben Kaczer, 2007 .

Critical thickness and strain relaxation in lattice mismatched II–VI semiconductor layers

Magnus Willander, Uma Jain, Herman Maes, 1998 .

Analysis of local mechanical stresses in and near tungsten lines on silicon substrate

Ingrid De Wolf, Herman Maes, Michel Ignat, 1999 .

Numerical aspects of the implementation of effective-medium approximation models in spectroscopic ellipsometry regression software

Herman Maes, Jan Vanhellemont, H. Maes, 1993 .

Silicon-on-insulator 'gate-all-around' MOS device

Jean-Pierre Colinge, C. Claeys, Herman Maes, 1990, 1990 IEEE SOS/SOI Technology Conference. Proceedings.

Characteristics and Correlated Fluctuations of the Gate and Substrate Current after Oxide Soft-Breakdown

Guido Groeseneken, Felice Crupi, Tanya Nigam, 1998 .