A. Kottantharayil

Extraction of the Top and Sidewall Mobility in FinFETs and the Impact of Fin-Patterning Processes and Gate Dielectrics on Mobility

K. De Meyer, M. Jurczak, V.V. Iyengar, 2007, IEEE Transactions on Electron Devices.

Analysis of the parasitic S/D resistance in multiple-gate FETs

N. Collaert, M. Jurczak, A. Dixit, 2005, IEEE Transactions on Electron Devices.

GIDL (gate-induced drain leakage) and parasitic schottky barrier leakage elimination in aggressively scaled HfO/sub 2/TiN FinFET devices

R. Rooyackers, N. Collaert, S. Biesemans, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Effect of Band-to-Band Tunneling on Junctionless Transistors

S. Ganguly, A. Kottantharayil, K. Murali, 2012, IEEE Transactions on Electron Devices.

Optimization of n-channel tunnel FET for the sub-22nm gate length regime

A. Kottantharayil, K.K. Bhuwalka, V. Nikam, 2008, 2008 Device Research Conference.

Integration challenges for multi-gate devices

R. Rooyackers, S. De Gendt, S. Locorotondo, 2005, 2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005..

Enhanced Electrostatic Integrity of Short-Channel Junctionless Transistor With High- $\kappa$ Spacers

S. Ganguly, A. Kottantharayil, S. Ganguly, 2011, IEEE Electron Device Letters.