John H. English

Low-damage anisotropic radical-beam ion-beam etching and selective chemical etching of focused-ion-beam-damaged GaAs substrates

Larry A. Coldren, Jay A. Skidmore, Pierre Petroff, 1992, Advanced Lithography.

Interface roughness scattering in InAs/AlSb quantum wells

Herbert Kroemer, Colombo R. Bolognesi, John H. English, 1992 .

Speed and effectiveness of windowless GaAs étalons as optical logic gates

Hyatt M. Gibbs, Arthur C. Gossard, W. Wiegmann, 1986 .

Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface

Herbert Kroemer, John H. English, G. Tuttle, 1990 .

Pulsed laser deposition of oriented In2O3 on (001) InAs, MgO, and yttria‐stabilized zirconia

James S. Speck, John H. English, J. Speck, 1993 .