A. R. Brown

Advanced TCAD simulation of local mismatch in 14nm CMOS technology FinFETs

A. Asenov, E. M. Bazizi, I. Chakarov, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Simulation based transistor-SRAM co-design in the presence of statistical variability and reliability

B. Cheng, A. Asenov, D. Reid, 2013, 2013 IEEE International Electron Devices Meeting.

Variability-aware TCAD based design-technology co-optimization platform for 7nm node nanowire and beyond

B. Cheng, A. Asenov, D. Reid, 2016, 2016 IEEE Symposium on VLSI Technology.

Impact of Cell Shape on Random Telegraph Noise in Decananometer Flash Memories

A. Asenov, A. R. Brown, A. Ghetti, 2012, IEEE Transactions on Electron Devices.

Unified compact modelling strategies for process and statistical variability in 14-nm node DG FinFETs

B. Cheng, A. Asenov, D. Reid, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Simultaneous simulation of systematic and stochastic process variations

A. Burenkov, J. Lorenz, A. Asenov, 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Predictive simulation of future CMOS technologies and their impact on circuits

B. Cheng, A. Asenov, A. R. Brown, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).