J. Gasiot

J. Gasiot, J. Fesquet, L. Dusseau, 1998, 1998 IEEE Radiation Effects Data Workshop. NSREC 98. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.98TH8385).

Study of basic mechanisms induced by an ionizing particle on simple structures

Guillaume Hubert, J. Gasiot, J.-M. Palau, 1999, 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471).

SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain

Robert Ecoffet, J. Gasiot, G. Bruguier, 1998 .

Evaluation of the upset risk in CMOS SRAM through full three dimensional simulation

J. Gasiot, S. Duzellier, Y. Moreau, 1995 .

Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs

J. Gasiot, G. Bruguier, J.-M. Palau, 1994 .

The latchup risk of CMOS-technology in space

Robert Ecoffet, J. Gasiot, G. Bruguier, 1993 .

An integrated sensor using optically stimulated luminescence for in-flight dosimetry

Robert Ecoffet, J. Gasiot, Laurent Dusseau, 2000 .

Failure mode of different irradiated power IGBT structures

J. Gasiot, J.-M. Palau, M.-C. Calvet, 1997, RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294).

Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout

J. Gasiot, G. Bruguier, J.-M. Palau, 1995 .

A simple method for the determination of the optical constants n, k and the thickness of a weakly absorbing thin film

J. Gasiot, J. P. Fillard, J. Gasiot, 1976 .

Characterization of an integrated sensor using optically stimulated luminescence for in-flight dosimetry

Robert Ecoffet, J. Gasiot, Laurent Dusseau, 2002 .

Energy deposited by high energy neutrons and protons in silicon (comparison between HETC and COSMIC codes)

J. Gasiot, J.-M. Palau, M.-C. Calvet, 1997, RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294).

Effects of atmospheric neutrons and natural contamination on advanced microelectronic memories

J. Gasiot, Antoine Touboul, Frédéric Wrobel, 2008 .

Experimental determination of the frequency factor of thermal annealing processes in metal–oxide–semiconductor gate-oxide structures

Kenneth F. Galloway, Ronald D. Schrimpf, Robert Ecoffet, 1997 .

Dependence of power MOSFET static burnout on charge distribution in the active region of IRF15O

E. G. Stassinopoulos, J. Gasiot, Philippe Calvel, 1993, RADECS 93. Second European Conference on Radiation and its Effects on Components and Systems (Cat. No.93TH0616-3).

High energy electron dose-mapping using optically stimulated luminescent films

J. Gasiot, Laurent Dusseau, J. Fesquet, 1999 .

Cell design modifications to harden an N-channel power IGBT against single event latchup

Robert Ecoffet, J. Gasiot, Eric Lorfevre, 1999 .

Experimental validation of an accelerated method of oxide-trap-level characterization for predicting long term thermal effects in metal oxide semiconductor devices

Ronald D. Schrimpf, J. Gasiot, J. P. David, 1997 .

Experimental and 2D simulation study of the single-event burnout in N-channel power MOSFETs

J. Gasiot, J.-M. Palau, P. Tastet, 1993 .

Extrapolation of radiation-induced EDFA gain degradation at space dose rate

Michel Sotom, J. Gasiot, Olivier Gilard, 2005 .

Radioactive Nuclei Induced Soft Errors at Ground Level

F. Wrobel, J. Gasiot, peixiong zhao, 2009, IEEE Transactions on Nuclear Science.

Prediction of the one-year thermal annealing of irradiated commercial devices based on experimental isochronal curves

F. Saigne, Ronald D. Schrimpf, Robert Ecoffet, 2000 .

Nanosecond infrared laser stimulation of luminescence in rare‐earth doped sulfides

J. Gasiot, J. P. Fillard, J. Gasiot, 1982 .

Hafnium and Uranium Contributions to Soft Error Rate at Ground Level

F. Wrobel, J. Gasiot, J. Gasiot, 2008, IEEE Transactions on Nuclear Science.

Use of the radiation-induced charge neutralization mechanism to achieve annealing of 0.35 /spl mu/m SRAMs

F. Saigne, J. Gasiot, L. Dusseau, 1999 .

Heavy ion induced failures in a power IGBT

Robert Ecoffet, J. Gasiot, J.-M. Palau, 1997 .

Experimental procedure to predict the competition between the degradation induced by irradiation and thermal annealing of oxide trapped charge in MOSFETs

F. Saigne, Ronald D. Schrimpf, Robert Ecoffet, 2000 .

Analysis of the proton-induced permanent degradation in an optocoupler

Robert Ecoffet, J. Gasiot, Laurent Dusseau, 2002 .

Effect of switching from high to low dose rate on linear bipolar technology radiation response

F. Saigne, J. Boch, J. Gasiot, 2003, Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003..

Threshold LET for SEU induced by low energy ions [in CMOS memories]

J. Gasiot, J.-M. Palau, P. J. McNulty, 1999 .