R. Trzcinski

Symmetric Vertical Parallel Plate Capacitors for On-Chip RF Circuits in 65-nm SOI Technology

Choongyeun Cho, Daeik D. Kim, Jonghae Kim, 2007, IEEE Electron Device Letters.

Highly manufacturable 40-50 GHz VCOs in a 120 nm system-on-chip SOI technology

M. Sherony, Jonghae Kim, J.-O. Plouchart, 2003, IEEE International Electron Devices Meeting 2003.

Performance Variations of a 66GHz Static CML Divider in 90nm CMOS

Jonghae Kim, J.-O. Plouchart, R. Trzcinski, 2006, 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers.

A 75GHz PLL Front-End Integration in 65nm SOI CMOS Technology

Choongyeun Cho, Jonghae Kim, Daihyun Lim, 2007, 2007 IEEE Symposium on VLSI Circuits.

Decomposition and Analysis of Process Variability Using Constrained Principal Component Analysis

Sangyeun Cho, Choongyeun Cho, Jonghae Kim, 2008, IEEE Transactions on Semiconductor Manufacturing.

Manufacturable Parasitic-Aware Circuit-Level FETs in 65-nm SOI CMOS Technology

Choongyeun Cho, Jonghae Kim, Daeik Kim, 2007, IEEE Electron Device Letters.

65nm SOI CMOS SoC Technology for Low-Power mmWave and RF Platform

Choongyeun Cho, Jonghae Kim, J.-O. Plouchart, 2008, 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

A 243-GHz F/sub t/ and 208-GHz F/sub max/, 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capability

Jonghae Kim, R. Trzcinski, S. Narasimha, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

A 1.2V 15.6mW 81GHz 2:1 Static CML Frequency Divider with a Band-Pass Load in a 90nm SOI CMOS Technology

Choongyeun Cho, Jonghae Kim, R. Trzcinski, 2007, 2007 IEEE Compound Semiconductor Integrated Circuits Symposium.

A 243-GHz F/sub t/ and 208-GHz F/sub max/, 90-nm SOI CMOS SoC technology with low-power mm-wave digital and RF circuit capability

R. Trzcinski, S. Narasimha, N. Zamdmer, 2005, IEEE Transactions on Electron Devices.