M. Yoshimaru

Suppression of the MOS transistor hot carrier degradation caused by water desorbed from intermetal dielectric

Kimiaki Shimokawa, Takashi Usami, S. Tokitou, 1992, 1992 Symposium on VLSI Technology Digest of Technical Papers.

Reduction of wiring capacitance with new low dielectric SiOF interlayer film for high speed/low power sub-half micron CMOS

Kimiaki Shimokawa, Takashi Usami, M. Yoshimaru, 1994, Proceedings of 1994 VLSI Technology Symposium.

Limitation of sputtered adhesion layer thickness for blanket CVD W in very high aspect contact filling

M. Yoshimaru, M. Ino, Shih-Chang Chen, 1991, 1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference.

Effects of deposition temperature on the oxidation resistance and electrical characteristics of silicon nitride

M. Yoshimaru, M. Ino, H. Tamura, 1994 .

Rugged surface poly-Si electrode and low temperature deposited Si/sub 3/N/sub 4/ for 64 Mbit and beyond STC DRAM cell

M. Yoshimaru, M. Ino, Akihiro Sakamoto, 1990, International Technical Digest on Electron Devices.

Rugged Surface Poly-Si Electrode and Low Temperature Deposited Si3N4 for 64Mbit and Beyond STC DRAm Cell

M. Yoshimaru, 1990 .

Silicon nitride thin-film deposition by LPCVD with in situ HF vapor cleaning and its application to stacked DRAM capacitor fabrication

M. Yoshimaru, M. Ino, N. Inoue, 1994 .