Yongsik Yim
发表
A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface
Young-Hyun Jun,
Jinho Ryu,
Changhyun Cho,
2012,
IEEE Journal of Solid-State Circuits.
Young-Hyun Jun,
Jinho Ryu,
Young-Ho Lim,
2011,
2011 Symposium on VLSI Circuits - Digest of Technical Papers.
Kinam Kim,
Jeehoon Han,
Yongsik Yim,
2009,
2009 Proceedings of the European Solid State Device Research Conference.
Jangho Park,
Sunghyun Kwon,
Jinho Kim,
2007,
2007 IEEE Symposium on VLSI Technology.
Jonghoon Park,
Hyun Wook Park,
Min-Seok Kim,
2016,
2016 IEEE International Solid-State Circuits Conference (ISSCC).