Frederic Monsieur

发表

Accurate and efficient design of experiment for reliability assessment. Application to a 20 /spl Aring/ gate oxide

Gerard Ghibaudo, G. Pananakakis, David Roy, 2001, 2001 IEEE International Integrated Reliability Workshop. Final Report (Cat. No.01TH8580).

On the role of holes in oxide breakdown mechanism in inverted nMOSFETs

Thomas Skotnicki, G. Pananakakis, Vincent Huard, 2003, Microelectron. Reliab..

Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides

G. Ribes, M. Denais, Vincent Huard, 2005, Microelectron. Reliab..

Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics

Arkadiusz Szewczyk, Gérard Ghibaudo, Frederic Monsieur, 2001, Microelectron. Reliab..

Gate oxide Reliability assessment optimization

G. Pananakakis, Gérard Ghibaudo, Frederic Monsieur, 2002, Microelectron. Reliab..

Analysis of recoverable and non-recoverable NBTI and PBTI using AC and DC stresses

Frederic Monsieur, Eduard Cartier, James Stathis, 2011, 2011 International Reliability Physics Symposium.

High voltage devices in advanced CMOS technologies

Frederic Monsieur, Christine Raynaud, Raúl Andrés Bianchi, 2009, 2009 IEEE Custom Integrated Circuits Conference.

Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride

Pascal Chevalier, Gérard Ghibaudo, Nathalie Revil, 2008, Microelectron. Reliab..

Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement

David Roy, Frederic Monsieur, E. Vincent, 2002, Microelectron. Reliab..

Invited) Effect of SOI Substrate on CMOS Devices Reliability

Vincent Huard, Frederic Monsieur, Florian Cacho, 2014 .

Ultra-Thin Body and BOX (UTBB) Device for Aggressive Scaling of CMOS Technology

Nicolas Loubet, Ali Khakifirooz, Maud Vinet, 2011 .

Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions

G. Pananakakis, David Roy, Gérard Ghibaudo, 2001, Microelectron. Reliab..

Wafer level measurements and numerical analysis of self-heating phenomena in nano-scale SOI MOSFETs

Frederic Monsieur, Clément Tavernier, Vincent Fiori, 2016, Microelectron. Reliab..

The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies

Gérard Ghibaudo, Frederic Monsieur, D. Rideau, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Failures in ultrathin oxides: Stored energy or carrier energy driven?

David Roy, Gérard Ghibaudo, Frederic Monsieur, 2001, Microelectron. Reliab..

New insights into the change of voltage acceleration and temperature activation of oxide breakdown

G. Ribes, Vincent Huard, David Roy, 2003, Microelectron. Reliab..

Degradation mechanism understanding of NLDEMOS SOI in RF applications

Frederic Monsieur, D. Lachenal, Alain Bravaix, 2007, Microelectron. Reliab..

TCAD study of back-gate biasing in UTBB

Terence B. Hook, Frederic Monsieur, Pranita Kulkarni, 2011, IEEE 2011 International SOI Conference.

Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides

G. Pananakakis, Gérard Ghibaudo, Frederic Monsieur, 2001, Microelectron. Reliab..

Ultra thin gate oxide characterization

David Roy, Frederic Monsieur, Fabien Gilibert, 2004 .

Breakdown mechanisms in ultra-thin Oxides: impact of carrier energy and current through substrate hot carrier stress study

Gerard Ghibaudo, G. Ribes, M. Denais, 2004 .

Experimental ${g}_{m}/{I}_{{D}}$ Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET

Christophe Lallement, Thierry Poiroux, Frederic Monsieur, 2018, IEEE Transactions on Electron Devices.

Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides

Gerard Ghibaudo, G. Pananakakis, G. Ribes, 2002, IEEE International Integrated Reliability Workshop Final Report, 2002..

HCI degradation model based on the diffusion equation including the MVHR model

Frederic Monsieur, D. Lachenal, Alain Bravaix, 2007 .

Time to breakdown and voltage to breakdown modeling for ultra-thin oxides (Tox<32/spl Aring/)

Gerard Ghibaudo, G. Pananakakis, David Roy, 2001, 2001 IEEE International Integrated Reliability Workshop. Final Report (Cat. No.01TH8580).

Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides

Gerard Ghibaudo, G. Pananakakis, G. Ribes, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..