Behzad Ebrahimi

发表

Ultra-low power FinFET based SRAM cell employing sharing current concept

Mohsen Imani, Mohsen Jafari, Behzad Ebrahimi, 2015 .

A high speed subthreshold SRAM cell design

Behzad Ebrahimi, Ali Afzali-Kusha, Amir-Reza Ahmadimehr, 2009, 2009 1st Asia Symposium on Quality Electronic Design.

A Microfabricated Phantom for Quantitative MR Perfusion Measurements: Validation of Singular Value Decomposition Deconvolution Method

Behzad Ebrahimi, Scott D. Swanson, Timothy E. Chupp, 2010, IEEE Transactions on Biomedical Engineering.

Robust polysilicon gate FinFET SRAM design using dynamic back-gate bias

Behzad Ebrahimi, Ali Afzali-Kusha, N. Sehatbakhsh, 2013, 2013 8th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS).

Robust FinFET SRAM design based on dynamic back-gate voltage adjustment

Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi, 2014, Microelectron. Reliab..

Statistical Design Optimization of FinFET SRAM Using Back-Gate Voltage

Behzad Ebrahimi, Ali Afzali-Kusha, Massoud Pedram, 2011, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement

Behzad Ebrahimi, Ali Afzali-Kusha, Saeed Mohammadi, 2011, Microelectron. Reliab..

Read static noise margin aging model considering SBD and BTI effects for FinFET SRAMs

Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi, 2016, Microelectron. Reliab..

Compensated Tikhonov regularization for quantitative perfusion measurements

Behzad Ebrahimi, Timothy E. Chupp, Behzad Ebrahimi, 2008, SPIE Medical Imaging.

A robust and low power 7T SRAM cell design

Behzad Ebrahimi, Ali Afzali-Kusha, Kolsoom Mehrabi, 2015, 2015 18th CSI International Symposium on Computer Architecture and Digital Systems (CADS).

G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems

Behzad Ebrahimi, Behjat Forouzandeh, Hossein Aghababa, 2012, IEICE Electron. Express.

Probability calculation of read failures in nano-scaled SRAM cells under process variations

Behzad Ebrahimi, Ali Afzali-Kusha, Massoud Pedram, 2012, Microelectron. Reliab..

Analytical modeling of read stability metric of SRAM cell in nanoscale era

Behzad Ebrahimi, Ali Afzali-Kusha, Hossein Aghababa, 2010, 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).

Fibrosis detection in renal artery stenosis mouse model using magnetization transfer MRI

Behzad Ebrahimi, Slobodan I Macura, Bruce E. Knudsen, 2013, Medical Imaging.

Low Standby Power and Robust FinFET Based SRAM Design

Behzad Ebrahimi, Ali Afzali-Kusha, Saeed Zeinolabedinzadeh, 2008, 2008 IEEE Computer Society Annual Symposium on VLSI.

A microfabricated phantom for diffusion tensor imaging

Behzad Ebrahimi, Quan Jiang, Siamak P. Nejad Davarani, 2010, Medical Imaging.

The effect of noise and depolarization on hyperpolarized tracers perfusion assessment

Behzad Ebrahimi, Scott D. Swanson, Timothy E. Chupp, 2007, 2007 4th IEEE International Symposium on Biomedical Imaging: From Nano to Macro.

An accurate analytical I–V model for sub-90-nm MOSFETs and its application to read static noise margin modeling

Behzad Ebrahimi, Ali Afzali-Kusha, Massoud Pedram, 2012, Journal of Zhejiang University SCIENCE C.

Modeling read SNM considering both soft oxide breakdown and negative bias temperature instability

Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi, 2012, Microelectron. Reliab..

A perfusion phantom for quantitative medical imaging

Behzad Ebrahimi, Scott D. Swanson, Timothy E. Chupp, 2008, SPIE Medical Imaging.

Realistic CNFET based SRAM cell design for better write stability

Behzad Ebrahimi, Ali Afzali-Kusha, B. Ebrahimi, 2009, 2009 1st Asia Symposium on Quality Electronic Design.

An analytical model for read static noise margin including soft oxide breakdown, negative and positive bias temperature instabilities

Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi, 2013, Microelectron. Reliab..

High-performance and high-yield 5 nm underlapped FinFET SRAM design using P-type access transistors

Behzad Ebrahimi, Ali Afzali-Kusha, Massoud Pedram, 2015, Sixteenth International Symposium on Quality Electronic Design.

A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies

Behzad Ebrahimi, Ali Afzali-Kusha, Massoud Pedram, 2015, Integr..

A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages

Massoud Pedram, Behzad Ebrahimi, Ali Afzali-Kusha, 2015, Int. J. Circuit Theory Appl..

Vth-control method in double gate field effect transistor domino circuits

Behzad Ebrahimi, Ali Afzali-Kusha, Saeed Zeinolabedinzadeh, 2009, 2009 10th International Conference on Ultimate Integration of Silicon.

Low-power data encoding/decoding for energy-efficient static random access memory design

Behzad Ebrahimi, Ali Afzali-Kusha, Massoud Pedram, 2019, IET Circuits Devices Syst..

HPM: High-Precision Modeling of a Low-Power Inverter-Based Memristive Neural Network

Behzad Ebrahimi, Massoud Dousti, Negin Mohajeri, 2021 .

Single-Ended 10T SRAM Cell with High Yield and Low Standby Power

Behzad Ebrahimi, Mohammad Chahardori, Nima Eslami, 2021, Circuits, Systems, and Signal Processing.

A RESURF LDMOSFET with a dummy gate on partial SOI

Behzad Ebrahimi, Ali Afzali-Kusha, Behrouz Afzal, 2012 .

NBTI tolerant 4T double-gate SRAM design

Behzad Ebrahimi, Ali Afzali-Kusha, 2009, 2009 10th International Conference on Ultimate Integration of Silicon.

An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read SNM modeling

Massoud Pedram, Behzad Ebrahimi, Ali Afzali-Kusha, 2011 .