B. Sassman

发表

Critical Components of FinFet Integration: Examining the Density Trade-off and Process Integration for FinFET Implementation

Byoung Hun Lee, Ji-Woon Yang, Raj Jammy, 2007 .

Challenges of III–V materials in advanced CMOS logic

T. Ngai, G. Bersuker, R. Jammy, 2012, Proceedings of Technical Program of 2012 VLSI Technology, System and Application.

Demonstration of $L_{g} \sim \hbox{55}\ \hbox{nm}$ pMOSFETs With $\hbox{Si/Si}_{0.25}\hbox{Ge}_{0.75}/\hbox{Si}$ Channels, High $I_{\rm on}/I_{\rm off}\ (≫ \hbox{5} \times \hbox{10}^{4})$ , and Controlled Short Channel Effects (SCEs)

Hsing-Huang Tseng, S. Datta, R. Jammy, 2008, IEEE Electron Device Letters.

Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs

Injo Ok, R. Jammy, P. Majhi, 2006, 2009 Symposium on VLSI Technology.

High mobility CMOS transistors on Si/SiGe heterostructure channels

Injo Ok, Raj Jammy, P. Y. Hung, 2012 .

SiGe CMOS on (110) channel orientation with mobility boosters : Surface orientation, channel directions, and uniaxial strain

R. Jammy, P. D. Kirsch, I. Ok, 2010, 2010 Symposium on VLSI Technology.

Vth variation and strain control of high Ge% thin SiGe channels by millisecond anneal realizing high performance pMOSFET beyond 16nm node

G. Bersuker, R. Jammy, P. Majhi, 2006, 2009 Symposium on VLSI Technology.

Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO/sub 2/ gate dielectric

B.H. Lee, P. Majhi, M.S. Akbar, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

The effects of Ge composition and Si cap thickness on hot carrier reliability of Si/Si1-xGex/Si p-MOSFETs with high-K/metal gate

G. Bersuker, R. Jammy, P. Majhi, 2008, 2008 Symposium on VLSI Technology.

CMOS band-edge schottky barrier heights using dielectric-dipole mitigated (DDM) metal/Si for source/drain contact resistance reduction

R. Jammy, Jiyoung Kim, P. Majhi, 2006, 2009 Symposium on VLSI Technology.

Mechanisms for low on-state current of Ge (SiGe) nMOSFETs: A comparative study on gate stack, resistance, and orientation-dependent effective masses

R. Jammy, P. Majhi, S. Parthasarathy, 2006, 2009 Symposium on VLSI Technology.

Dual channel FinFETs as a single high-k/metal gate solution beyond 22nm node

R. Jammy, P. D. Kirsch, P. Majhi, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).