Erwine Pargon

发表

Atomic force microscopy study of photoresist sidewall smoothing and line edge roughness transfer during gate patterning

Marc Fouchier, Erwine Pargon, E. Pargon, 2013 .

Line edge roughness transfer during plasma etching: modeling approaches and comparison with experimental results

Evangelos Gogolides, Vassilios Constantoudis, Erwine Pargon, 2009, Advanced Lithography.

Is the resist sidewall after development isotropic or anisotropic? effects of resist sidewall morphology on LER reduction and transfer during etching

Evangelos Gogolides, Vassilios Constantoudis, Erwine Pargon, 2010, Advanced Lithography.

Optimization of H2 thermal annealing process for the fabrication of ultra-low loss sub-micron silicon-on-insulator rib waveguides

Corrado Sciancalepore, Erwine Pargon, Philippe Lyan, 2018, OPTO.

A new method based on AFM for the study of photoresist sidewall smoothening and LER transfer during gate patterning

Marc Fouchier, Erwine Pargon, Benjamin Bardet, 2013, Advanced Lithography.

Directed self-assembly of PS-b-PDMS into 193nm photoresist patterns and transfer into silicon by plasma etching

Olivier Joubert, Erwine Pargon, Gilles Cunge, 2014, Advanced Lithography.

Effect of etch pattern transfer on local overlay (OVL) margin in 28nm gate integration.

Erwine Pargon, Pascal Gouraud, Bertrand Le-Gratiet, 2014, Advanced Lithography.

Line width roughness reduction strategies for patterns exposed via electron beam lithography

L. Pain, Erwine Pargon, B. Icard, 2014, Advanced Lithography.

Improvement of sidewall roughness of sub-micron silicon-on-insulator waveguides for low-loss on-chip links

Corrado Sciancalepore, Vincent Hughes, Erwine Pargon, 2017, OPTO.

The CD metrology perspectives and future trends

Erwine Pargon, Vincent Farys, L. Babaud, 2008, Lithography Asia.

A CD AFM study of the plasma impact on 193nm photoresist LWR: role of plasma UV and ions

Olivier Joubert, Erwine Pargon, Mickael Martin, 2009, Advanced Lithography.

Plasma treatments to improve line-width roughness during gate patterning

Olivier Joubert, Marc Fouchier, Erwine Pargon, 2013 .

193nm resist chemical modification induced by HBr cure plasma treatment: a TD-GC/MS outgassing study

Erwine Pargon, Raluca Tiron, Claire Sourd, 2011, Advanced Lithography.

Plasma treatment to improve linewidth roughness during gate patterning

Olivier Joubert, Marc Fouchier, Erwine Pargon, 2012, Advanced Lithography.

Technological advances on Si and Si3N4 low-losses waveguide platforms for nonlinear and quantum optics applications

Corrado Sciancalepore, Erwine Pargon, Jean-Michel Hartmann, 2019, OPTO.

Study of 193-nm resist degradation under various etch chemistries

Olivier Joubert, Erwine Pargon, Benedicte Mortini, 2007, SPIE Advanced Lithography.

Evaluation of methods for noise-free measurement of LER/LWR using synthesized CD-SEM images

Vassilios Constantoudis, Erwine Pargon, 2013, Advanced Lithography.

Impact of HBr and Ar cure plasma treatments on 193nm photoresists

Olivier Joubert, Erwine Pargon, Damien Perret, 2008, SPIE Advanced Lithography.

Cycling of implantation step and remote plasma process step for nitride spacer etching applications.

Erwine Pargon, C. Petit-Etienne, Nicolas Loubet, 2020, Advanced Lithography.

Selective enhancement of nonlinear processes in linearly uncoupled silicon resonators

Corrado Sciancalepore, Erwine Pargon, Marco Liscidini, 2021, OPTO.

HBr Plasma Treatment Versus VUV Light Treatment to Improve 193 nm Photoresist Pattern Linewidth Roughness

Olivier Joubert, Marc Fouchier, Erwine Pargon, 2011 .

Plasma impact on 193 nm photoresist linewidth roughness: Role of plasma vacuum ultraviolet light

Olivier Joubert, Erwine Pargon, J. Foucher, 2009 .

Line-edge-roughness transfer during plasma etching: modeling approaches and comparison with experimental results

Evangelos Gogolides, Vassilios Constantoudis, Erwine Pargon, 2009 .

Etching mechanisms of HfO2, SiO2, and poly-Si substrates in BCl3 plasmas

Olivier Joubert, Erwine Pargon, Gilles Cunge, 2007 .

An atomic force microscopy-based method for line edge roughness measurement

Marc Fouchier, Erwine Pargon, E. Pargon, 2013 .

Characterization of resist-trimming processes by quasi in situ x-ray photoelectron spectroscopy

Olivier Joubert, Erwine Pargon, Songlin Xu, 2004 .

Sub-10 nm plasma nanopatterning of InGaAs with nearly vertical and smooth sidewalls for advanced n-fin field effect transistors on silicon

Thierry Baron, Erwine Pargon, Bassem Salem, 2017 .

Smoothing mechanisms involved in thermal treatment for linewidth roughness reduction of 193-nm photoresist patterns

Marc Fouchier, Erwine Pargon, K. Menguelti, 2013 .

Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing

Olivier Joubert, Erwine Pargon, Gilles Cunge, 2010 .

Revisiting the mechanisms involved in Line Width Roughness smoothing of 193 nm photoresist patterns during HBr plasma treatment

Olivier Joubert, Erwine Pargon, Gilles Cunge, 2013 .

Unbiased line width roughness measurements with critical dimension scanning electron microscopy and critical dimension atomic force microscopy

Olivier Joubert, Marc Fouchier, Erwine Pargon, 2012 .

Benefits of plasma treatments on critical dimension control and line width roughness transfer during gate patterning

Olivier Joubert, Marc Fouchier, Erwine Pargon, 2013 .

Improvement of Sidewall Roughness of Submicron SOI Waveguides by Hydrogen Plasma and Annealing

Corrado Sciancalepore, Erwine Pargon, Philippe Lyan, 2018, IEEE Photonics Technology Letters.

Characterisation of ultraviolet nanoimprint dedicated resists

Erwine Pargon, J. Boussey, P. Voisin, 2007 .

Linewidth roughness transfer measured by critical dimension atomic force microscopy during plasma patterning of polysilicon gate transistors

Olivier Joubert, Erwine Pargon, J. Foucher, 2008 .

Ultra Low-Loss Silicon Waveguides for 200 mm Photonics Platform

Corrado Sciancalepore, Erwine Pargon, Stephane Bernabe, 2019, 2019 IEEE 16th International Conference on Group IV Photonics (GFP).